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參數(shù)資料
| 型號(hào)： | GN01100B |
| 廠商： | PANASONIC CORP |
| 元件分類： | 衰減器 |
| 英文描述： | GaAs IC (with built-in ferroelectric) |
| 中文描述： | RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER |
| 封裝： | SC-88, 6 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 30K |
| 代理商： | GN01100B |
GaAs MMIC
GN01100B
GaAs IC (with built-in ferroelectric)
1
For the preamplifier of the transmitting section in a cellular phone
Other communication equipment
I
Features
Super miniature S-Mini 6-pin package (2125 size)
Transmitter amplifier : Wide dynamic range on low operation current
: Gain control function built-in
I
Absolute Maximum Ratings
T
a
=
25
°
C
1 :RF
IN
2 :V
DD1
3 :V
AGC
4 :V
DD2
5 :GND
6 :V
REF
EIAJ : SC-88
S Mini Type Package (6-pin)
Parameter
Symbol
Conditions
min
typ
max
Unit
Circuit current
*1
Power gain 1
*1
Power gain 2
*1
I
DD
PG1
V
AGC
=
2.0 V, P
IN
=
20 dBm
V
AGC
=
2.0 V, P
IN
=
20 dBm
V
AGC
=
0.5 V, P
IN
=
20 dBm
PG1
PG2
Pin
=
20 dBm
V
AGC
=
2.0 V, P
OUT
=
5 dBm
IS-95 modulation, 900 kHz
Detuning
30 kHz
Bandwidth
V
AGC
=
2.0 V, Pout
=
5 dBm
IS-95 modulation, 1.98 MHz
Detuning
30 kHz Bandwidth
37
45
mA
20
23
dB
PG2
10
5
dB
Dynamic range
Gain control sensitivity
*1, 2
DR
30
34
dB
GS
25
49
54
90
50
dB/V
Adjacent channel leakage
power (ACP) 1
*1, 3
ACP1
dBc
Adjacent channel leakage
power (ACP) 1
*1, 3
ACP2
74
65
dBc
I
Electrical Characteristics
V
DD1
=
V
DD2
=
3.0 V, f
=
906 MHz, T
a
=
25
°
C
±
3
°
C
Unit: mm
Marking Symbol : HU
Note) *1 : Refer to measurement circuit.
*2 : {PG(V
AGC
=
1.6V)[dB]
PG(V
AGC
=
1.2V)[dB]/0.4[V]
*3 : Design-guaranteed items.
Parameter
Symbol
Ratings
Unit
Power supply voltage
V
DD
I
DD
V
AGC
P
IN
P
D
T
opr
T
stg
5
V
Circuit current
80
mA
Gate control voltage
0 to
3
5
V
Max input power
dBm
Allowable power dissipation
150
mW
Operating ambient temperature
30 to
+
90
40 to
+
120
°
C
°
C
Storage temperature
2
±
1
±
1
3
2
0.2
±0.05
0.12
0.02
0
±
R0.2
0
0
2.0
±0.1
0
0
±
0
±
6
5
4
0.65
0.65
6 - 0
°
to 10
°
0
0
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