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參數(shù)資料
| 型號(hào)： | GMF05MC-GS08 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | Low Capacitance ESD Protection Diode Array |
| 中文描述： | 低電容ESD保護(hù)二極管陣列 |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 147K |
| 代理商： | GMF05MC-GS08 |
www.vishay.com
2
Document Number 85855
Rev. 1.1, 02-Mar-05
VISHAY
GMF05MC
Vishay Semiconductors
Electrical Characteristics
Ratings at 25 °C, ambient temperature unless otherwise specified
Parameter
Reverse stand-off voltage
Typical Characteristics (Tamb = 25
°
C unless otherwise specified)
Test condition
Symbol
V
RWM
V
BR
I
R
V
C
V
C
V
F
C
j
Min
Typ.
Max
5
Unit
V
Reverse breakdown voltage
I
t
= 1 mA
V
RWM
= 5 V
I
PP
= 1 A, 8/20
μ
s waveform
I
PP
= 7 A, 8/20
μ
s waveform
I
F
= 1 A, 8/20
μ
s waveform
V
R
= 0 V, f = 1 MHz
6
V
μ
A
V
Reverse leakage current
0.2
Clamping voltage
9
12
V
Peak forward voltage
1.5
V
Junction capacitance between I/
O pins and Gnd
75
pF
Figure 1. Pulse Derating Curve
Figure 2. Pulse Waveform
0
25
50
75
100
0
75
25
T
A
-
50
Ambient Temperature (
°
C)
100
125
150
175
P
P
)
P
)
D
18687
I
P
a
k
R
Pulse Width (td)
is defined
a
s the point
where the pe
a
k current
dec
a
ys to 50
%
of I
PPM
t - Time (
μ
s)
td=I2
0
8
0
90
6
0
50
70
40
20
10
30
100
110
15
20
5
25
30
10
0
1
8688
Figure 3. Non -Repetitive Peak Pulse Power vs. Pulse Time
Figure 4. Typical Capacitance vs. Reverse Voltage
0.01
0.1
1
10
100
0.1
1
10
100
1000
1
8668
P
P
-
a
k
t
d
- Pulse Dur
a
tion (
μ
A )
0
10
20
30
40
50
6
0
70
8
0
90
100
0
1
2
3
4
5
6
1
866
9
V
R
- Reverse Volt
ag
e ( V )
C
-
a
p
a
c
a
n
D
f = 1 MHz
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| GMF-1 | 功能描述:保險(xiǎn)絲 300VAC Time Delay Non-Rejecting RoHS:否 制造商:Littelfuse 產(chǎn)品:Surface Mount Fuses 電流額定值:0.5 A 電壓額定值:600 V 保險(xiǎn)絲類型:Fast Acting 保險(xiǎn)絲大小/組:Nano 尺寸:12.1 mm L x 4.5 mm W 安裝風(fēng)格: 端接類型:SMD/SMT 系列:485 |
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