參數(shù)資料
型號(hào): GMBT9015
廠商: GTM CORPORATION
英文描述: PNP EPITAXIAL PLANAR TRANSISTOR
中文描述: 進(jìn)步黨外延平面晶體管
文件頁數(shù): 1/2頁
文件大?。?/td> 258K
代理商: GMBT9015
1/2
ISSUED DATE :2003/05/31
REVISED DATE :2004/12/23B
G
G M
M B
B T
T 99001155
P
P N
N P
P E
E P
P II T
T A
A X
X II A
A L
L P
P L
L A
A N
N A
A R
R T
T R
R A
A N
N S
S II S
S T
T O
O R
R
Description
The GMBT9015 is designed for use in pre-amplifier of low level and low noise.
Package Dimensions
Millimeter
REF.
Min.
Max.
REF.
Min.
Max.
A
2.70
3.10
G
1.90 REF.
B
2.40
2.80
H
1.00
1.30
C
1.40
1.60
K
0.10
0.20
D
0.35
0.50
J
0.40
-
E
0
0.10
L
0.85
1.15
F
0.45
0.55
M
0 C
10 C
Absolute Maximum Ratings at Ta = 25 ::::
Parameter
Symbol
Ratings
Unit
Junction Temperature
Tj
+150
Storage Temperature
Tstg
-55 ~ +150
Collector to Base Voltage
VCBO
-50
V
Collector to Emitter Voltage
VCEO
-45
V
Emitter to Base Voltage
VEBO
-5
V
Collector Current
IC
-100
mA
Total Power Dissipation
PD
225
mW
Characteristics at Ta = 25 ::::
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
-50
-
V
IC=-100uA, IE =0
BVCEO
-45
-
V
IC=-1mA, IB=0
BVEBO
-5
-
V
IE=-100uA, IC=0
ICBO
-
-50
nA
VCB=-50V , IE=0
IEBO
-
-50
nA
VEB=-5V , IC=0
*VCE(sat)1
-
-0.2
-0.7
V
IC=-100mA, IB=-5mA
*VCE(sat)2
-
-0.82
-1
V
IC=-100mA, IB=-5mA
VBE(on)
-0.6
-0.65
-0.75
V
VCE=-5V, IC=-2mA
*hFE
100
200
600
VCE=-5V, IC=-1mA
fT
100
190
-
MHz
VCE=-5V,IC=-10mA
Cob
-
4.5
7
pF
VCB=-10V, f=1MHz,IE=0
* Pulse Test: Pulse Width 380 s, Duty Cycle 2%
Classification Of hFE
Rank
B
C
Range
100-300
200-600
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