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參數(shù)資料
| 型號： | GM71C4400CT |
| 廠商： | LG Corp. |
| 英文描述： | 1,048,576 WORDS x 4BIT CMOS DYNAMIC RAM |
| 中文描述： | 1,048,576字× 4位的CMOS動態(tài)隨機存儲器 |
| 文件頁數(shù)： | 4/9頁 |
| 文件大?。?/td> | 104K |
| 代理商： | GM71C4400CT |
LG Semicon
GM71C(S)4400C/CL
4
Read, Write, Read-Modify-Write and Refresh Cycles
(Common Parameters)
Symbol
Parameter
Note
Max
Unit
Min
Max
Min
Max
Min
t
RC
t
RP
t
RAS
t
CAS
t
ASR
t
RAH
t
ASC
t
CAH
t
RCD
t
RAD
t
RSH
t
CSH
t
CRP
t
ODD
t
DZO
t
DZC
Random Read or Write Cycle Time
110
-
130
-
150
-
ns
RAS Precharge Time
40
-
50
-
60
-
ns
RAS Pulse Width
60
10,000
70
10,000
80
10,000
ns
CAS Pulse Width
15
10,000
10,000
10,000
ns
20
20
Row Address Set-up Time
0
-
-
-
ns
0
0
Row Address Hold Time
10
-
-
-
ns
10
10
Column Address Set-up Time
0
-
-
-
ns
0
0
Column Address Hold Time
15
-
-
-
ns
15
15
RAS to CAS Delay Time
20
45
50
60
ns
20
20
8
RAS to Column Address Delay Time
15
30
35
40
ns
15
15
9
RAS Hold Time
15
-
-
-
ns
20
20
CAS Hold Time
60
-
-
-
ns
70
80
CAS to RAS Precharge Time
10
-
-
-
ns
10
10
t
T
Transition Time
(Rise and Fall)
3
50
50
50
ns
3
3
7
t
REF
Refresh Period
-
16
16
16
ms
-
-
Capacitance
(V
CC
= 5V+/-10%, T
A
= 25C)
Symbol
Parameter
Note
C
I1
C
I2
C
I/O
Input Capacitance (Address)
Input Capacitance (Clocks)
Data Input, Output Capacitance (Data-In, Out)
1
1
1, 2
Unit
§ü
§ü
§ü
Max
5
7
10
Min
-
-
-
Note: 1. Capacitance measured with Boonton Meter or effective capacitance measuring method.
2. CAS = V
IH
to disable D
OUT
.
AC Characteristics
(V
CC
= 5V+/-10%, T
A
= 0 ~ 70C, Notes 1, 14, 15, 16)
-
128
128
128
ms
-
-
Refresh Period (L-version)
OE to D
IN
Delay Time
15
-
-
-
ns
20
20
OE Delay Time from D
IN
0
-
-
-
ns
0
0
CAS Set-up Time from D
IN
0
-
-
-
ns
0
0
GM71C(S)4400
C/CL-60
GM71C(S)4400
C/CL-70
GM71C(S)4400
C/CL-80
Test Conditions
Input rise and fall times: 5ns
Input, output timing reference levels: 0.8V, 2.4V
Output load : 2 TTL gate + C
L
(100
§ü
)
(Including scope and jig)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| GM71C4400CT-60 | 1,048,576 WORDS x 4BIT CMOS DYNAMIC RAM |
| GM71C4400CT-70 | 1,048,576 WORDS x 4BIT CMOS DYNAMIC RAM |
| GM71C4400CT-80 | 1,048,576 WORDS x 4BIT CMOS DYNAMIC RAM |
| GM71S4400CLT-60 | Single Output LDO, 400mA, Fixed(5.0V), Low Noise, Fast Transient Response 8-MSOP -40 to 85 |
| GM71S4400CLT-70 | Single Output LDO, 400mA, Fixed(5.0V), Low Noise, Fast Transient Response 8-MSOP -40 to 85 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GM71C4400CT-60 | 制造商:LG 制造商全稱:LG 功能描述:1,048,576 WORDS x 4BIT CMOS DYNAMIC RAM |
| GM71C4400CT-70 | 制造商:LG 制造商全稱:LG 功能描述:1,048,576 WORDS x 4BIT CMOS DYNAMIC RAM |
| GM71C4400CT-80 | 制造商:LG 制造商全稱:LG 功能描述:1,048,576 WORDS x 4BIT CMOS DYNAMIC RAM |
| GM71C4400CZ-60 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x4 Fast Page Mode DRAM |
| GM71C4400CZ-70 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x4 Fast Page Mode DRAM |
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