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參數(shù)資料
| 型號： | GL9575 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 中文描述： | P溝道增強型功率MOSFET |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 239K |
| 代理商： | GL9575 |
GL9575
Page: 2/4
ISSUED DATE :2005/02/18
REVISED DATE :
Electrical Characteristics(Tj = 25
Unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Drain-Source Breakdown Voltage
BVDSS
-60
-
V
VGS=0, ID=-250uA
Breakdown Voltage Temperature Coefficient
BVDSS /
Tj
-
-0.04
-
V/ :
Reference to 25 : , ID=-1mA
Gate Threshold Voltage
VGS(th)
-1.0
-
-3.0
V
VDS=VGS, ID=-250uA
Forward Transconductance
gfs
-
7
-
S
VDS=-10V, ID=-4A
Gate-Source Leakage Current
IGSS
-
D100
nA
VGS= D25V
Drain-Source Leakage Current(Tj=25 : )
-
-1
uA
VDS=-60V, VGS=0
Drain-Source Leakage Current(Tj=70 : )
IDSS
-
-25
uA
VDS=-48V, VGS=0
-
90
VGS=-10V, ID=-4A
Static Drain-Source On-Resistance2
RDS(ON)
-
120
m
VGS=-4.5V, ID=-3A
Total Gate Charge2
Qg
-
18
28
Gate-Source Charge
Qgs
-
5
-
Gate-Drain (“Miller”) Change
Qgd
-
7
-
nC
ID=-4A
VDS=-48V
VGS=-4.5V
Turn-on Delay Time2
Td(on)
-
12
-
Rise Time
Tr
-
5
-
Turn-off Delay Time
Td(off)
-
68
-
Fall Time
Tf
-
32
-
ns
VDS=-30V
ID=-1A
VGS=-10V
RG=3.3
RD=30
Input Capacitance
Ciss
-
1745
2790
Output Capacitance
Coss
-
165
-
Reverse Transfer Capacitance
Crss
-
125
-
pF
VGS=0V
VDS=-25V
f=1.0MHz
Source-Drain Diode
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Forward On Voltage2
VSD
-
-1.2
V
IS=-2A, VGS=0V
Reverse Recovery Time2
Trr
-
56
-
ns
Reverse Recovery Charge
Qrr
-
146
-
nC
IS=-4A, VGS=0V
dI/dt=100A/ s
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width 300us, duty cycle 2%.
3. Surface mounted on 1 in2 copper pad of FR4 board; 125 : /W when mounted on Min. copper pad.
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