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參數(shù)資料
| 型號(hào)： | GDU90-20722 |
| 廠商： | Dynex Semiconductor Ltd. |
| 英文描述： | Gate Drive Unit |
| 中文描述： | 門驅(qū)動(dòng)裝置 |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 37K |
| 代理商： | GDU90-20722 |
GDU 90 20722
2/4
Units
Max.
Typ.
Min.
Conditions
Symbol
Parameter
t
1*
Adjustable by R81 + R82
-
Delay time emitter
current to receiver o/p
t
2
-
I
FGM pulse width
Minimum on time
10%
I
FGM to 90% IG(ON)
t
5*
t
6
Receiver storage time
t
7
-
0.4
-
0.8
s
5.2
-
6.2
s
-
25
-
s
80
-
110
s
0.5
-
0.9
s
1.5
-
2.3
s
Adjustable by R38
80
-
110
s
No response pulse width of
input signal
23
s
Turn-on delay emitter
current to 10% I
FGM
Turn-off delay.
Emitter current to 90% I
G(ON)
Minimum off time
90% I
G(ON) to 10% IFGM
t
8*
Delay time
Gate volts to o/p emitter current
t
9
Turn-off delay
Gate volts to test receiver o/p
t
10
Storage time
Gate volts to o/p emitter current
Turn-on delay
Gate volts to test receiver o/p
-
0.81
-
s
-
0.11
-
s
-
0.7
-
s
-
0.1
-
s
-
Measured at low I
GQM
Measured at low I
GQM
-
Adjustable by R37
-
t
4
t
3*
t
12
t
11
* t
1,t3,t5,t8 are factory settings.
Adjustment of t
1 alters t3.
1. Varies with I
GQM due to gate lead impedance.
Test circuit
emitter current
Control card
receiver output
t1
t2
10s
t6
10%
t3
t4
0V
-8V
Min. ON time
t5
t7
90% IG(ON)
t8
I GQM
QGQT
Min. OFF
dIGQ/dt
t11
t12
t9
t10
Gate voltage
Control card emitter current
Test circuit receiver output
-8V
Gate
Drive
Unit
Waveforms
dIFG/dt
I FGM
Gate current
TIMING CHARACTERISTICS
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