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參數資料
| 型號： | GD3NB60K |
| 廠商： | 意法半導體 |
| 英文描述： | N-CHANNEL 3A - 600V - TO-220/DPAK/D2PAK PowerMESH⑩ IGBT |
| 中文描述： | N溝道3A條- 600V的- IGBT的TO-220/DPAK/D2PAK PowerMESH⑩ |
| 文件頁數： | 2/14頁 |
| 文件大?。?/td> | 707K |
| 代理商： | GD3NB60K |
STGP3NB60K/STGD3NB60K/STGP3NB60KD/STGP3NB60KDFP/STGB3NB60KD
2/14
ABSOLUTE MAXIMUM RATINGS
Symbol
(
n
) Pulse width limited by safe operating area
(1)
For “D” version only
THERMAL DATA
ELECTRICAL CHARACTERISTICS
(TCASE
= 25 °C UNLESS OTHERWISE SPECIFIED)
MAIN PARAMETERS
Symbol
Parameter
V
BR(CES)
Collector-Emitter Breakdown
Voltage
I
CES
Collector cut-off
(V
GE
= 0)
V
CE
= Max Rating, T
C
= 125 °C
I
GES
Gate-Emitter Leakage
Current (V
CE
= 0)
V
GE(th)
Gate Threshold Voltage
V
CE
= V
GE
, I
C
= 250μA
V
CE(sat)
Collector-Emitter Saturation
Voltage
V
GE
= 15V, I
C
= 3 A, Tj =125°C
Parameter
Value
Unit
TO-220
D
2
PAK
TO-220FP
DPAK
V
CES
V
ECR
V
GE
I
C
I
C
I
CM
(
n
)
I
f
(1)
I
fm
(1)
P
TOT
Collector-Emitter Voltage (V
GS
= 0)
600
V
Emitter-Collector Voltage
20
V
Gate-Emitter Voltage
±20
V
Collector Current (continuos) at T
C
= 25°C
Collector Current (continuos) at T
C
= 100°C
6
6
6
A
3
3
3
A
Collector Current (pulsed)
24
24
24
A
Forward Current
3
A
Forward Current Pulsed
24
A
Total Dissipation at T
C
= 25°C
Derating Factor
68
25
60
W
0.75
W/°C
V
ISO
T
stg
T
j
Insulation Withstand Voltage A.C.
--
2500
--
V
Storage Temperature
– 55 to 150
150
°C
Max. Operating Junction Temperature
TO-220
D
2
PAK
1.8
TO-220FP
DPAK
Rthj-case
Rthj-amb
Rthc-h
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-heatsink Typ
5
2.1
100
°C/W
°C/W
°C/W
62.5
0.5
Test Conditions
I
C
= 250 μA, V
GE
= 0
Min.
600
Typ.
Max.
Unit
V
V
CE
= Max Rating, T
C
= 25 °C
50
500
μA
μA
V
GE
= ±20V , V
CE
= 0
±100
nA
5
7
V
V
GE
= 15V, I
C
= 3 A
2.3
1.9
2.8
V
V
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