參數(shù)資料
型號(hào): GBPC1202/51-E4
廠商: VISHAY SEMICONDUCTORS
元件分類(lèi): 參考電壓二極管
英文描述: 12 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE
封裝: PLASTIC, CASE GBPC, 4 PIN
文件頁(yè)數(shù): 2/4頁(yè)
文件大?。?/td> 39K
代理商: GBPC1202/51-E4
GBPC12, 15, 25 and 35
Vishay Semiconductors
formerly General Semiconductor
www.vishay.com
2
Document Number 88612
09-Jul-02
Maximum Ratings and Thermal Characteristics
(T
A
= 25°C unless otherwise noted)
GBPC12, 15, 25, 35
Symbols
005
01
02
04
06
08
10
Units
Maximum repetitive peak reverse voltage
V
RRM
50
100
200
400
600
800
1000
V
Maximum RMS voltage
V
RMS
35
70
140
280
420
560
700
V
Maximum DC blocking voltage
V
DC
50
100
200
400
600
800
1000
V
Maximum average forward
rectified output current
(See Fig.1)
GBPC12
GBPC15
GBPC25
GBPC35
12
15
25
35
I
F(AV)
A
Peak forward surge current single
sine-wave superimposed on
rated load (JEDEC Method)
GBPC12
GBPC15
GBPC25
GBPC35
200
300
300
400
I
FSM
A
Rating (non-repetitive, for t
greater than 1ms and less
than 8.3ms) for fusing
GBPC12
GBPC15
GBPC25
GBPC35
160
375
375
660
I
2
t
A
2
sec
RMS isolation voltage from case to leads
Typical thermal resistance per leg
(1)
V
ISO
2500
V
GBPC12-25
GBPC35
R
Θ
JC
1.9
1.4
°C/W
Operating junction storage temperature range
T
J
, T
STG
-55 to +150
°C
Electrical Characteristics
Ratings at 25°C ambient temperature unless otherwise specified.
GBPC12, 15, 25, 35
Symbols
005
01
02
04
06
08
10
Units
Maximum instantaneous
forward voltage drop per
leg at
GBPC12 I
F
=6.0A
GBPC15 I
F
=7.5A
GBPC25 I
F
=12.5A
GBPC35 I
F
=17.5A
V
F
1.1
V
Maximum reverse DC current at rated T
A
=25°C
DC blocking voltage per leg
5.0
500
T
A
=125°C
I
R
μ
A
Typical junction capacitance per leg
at
4V, 1MH
Z
C
J
300
pF
Notes:
(1) Thermal resistance from junction to case per leg
(2) Bolt down on heatsink with silicone thermal compound between bridge and mounting surface for maximum heat transfer with #10 screw
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