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參數(shù)資料
| 型號： | GBJ810-F |
| 廠商： | DIODES INC |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 8.0A GLASS PASSIVATED BRIDGE RECTIFIER |
| 中文描述： | 8 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE |
| 封裝： | ROHS COMPLIANT, PLASTIC, GBJ, 4 PIN |
| 文件頁數(shù)： | 2/3頁 |
| 文件大小： | 74K |
| 代理商： | GBJ810-F |
DS21217 Rev. 7 - 2
2 of 3
GBJ8005-GBJ810
www.diodes.com
0.01
0.1
1.0
10
0
0.4
0.8
1.2
1.6
1.8
V , INSTANTANEOUS FORWARD VOLTAGE (V)
Fig.2 Typical Forward Characteristics (per element)
F
I
,
INST
ANT
A
NEOUS
FOR
W
A
RD
CURRENT
(A)
F
T= 25 C
j
°
0
40
80
120
160
180
1
10
100
I
,
PEAK
FOR
W
A
RD
SURGE
CURRENT
(A)
FSM
NUMBER OF CYCLES AT 60 Hz
Fig. 3 Maximum Non-Repetitive Surge Current
T = 150 C
j
°
Single half-sine-wave
10
100
1
10
100
C
,
T
O
T
A
L
C
AP
ACIT
ANCE
(pF)
T
V , REVERSE VOLTAGE (V)
Fig.4 Typical Total Capacitance (per element)
R
f = 1MHz
T= 25 C
j
°
0.1
1.0
10
100
1000
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fig.5 Typical Reverse Characteristics
T= 50 C
j
°
T = 125 C
j
°
T = 100 C
j
°
T= 25 C
j
°
0
2
4
10
25
50
75
100
125
150
I
,
A
VERAGE
R
ECTIFIED
C
URRENT
(A)
O
T , CASE TEMPERATURE ( C)
Fig. 1 Forward Current Derating Curve
C
°
8
6
With heatsink
Without heatsink
Resistive or
Inductive load
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| GBJ8A | 制造商:SECOS 制造商全稱:SeCoS Halbleitertechnologie GmbH 功能描述:-8 .0 AMP Glass Passivated Bridge Rectifiers |
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