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參數(shù)資料
| 型號： | GBJ808 |
| 廠商： | LITE-ON SEMICONDUCTOR CORP |
| 元件分類： | 橋式整流 |
| 英文描述： | 2.9 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE |
| 封裝： | PLASTIC, GBJ, 4 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 93K |
| 代理商： | GBJ808 |
GBJ804 thru GBJ810
FEATURES
Rating to 1000V PRV
Ideal for printed circuit board
Low forward voltage drop, high current capability.
Reliable low cost construction utilizing molded plastic
technique results in inexpensive product
The plastic material has UL flammability classification
94V-0
UL Recognition File # E95060
MECHANICAL DATA
Polarity : Symbols molded on body
Weight : 0.23 ounces, 6.6 grams
Mounting position : Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
℃
@TC=110 C
(with heatsink Note 2)
(without heatsink)
NOTES : 1.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2.Device mounted on 100mm x 100mm x 1.6mm Cu Plate Heatsink.
VRMS
VDC
VRRM
I(AV)
IFSM
VF
Maximum Average Forward
Rectified Current
Peak Forward Surge Current
8.3ms single half sine-wave
superimposed on rated load
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum forward Voltage at 4.0A DC
8.0
170
1.0
TJ
Operating Temperature Range
-55 to +150
C
TSTG
Storage Temperature Range
-55 to +150
C
Typical Thermal Resistance (Note 2)
R0JC
2.0
C/W
IR
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@TJ =125 C
@TJ =25 C
5.0
500
uA
V
A
V
UNIT
V
120
A S
2
I t
2
I t Rating for fusing (t < 8.3ms)
2
CHARACTERISTICS
SYMBOL
2.9
CJ
55
pF
Typical Junction
Capacitance per element (Note 1)
GLASS PASSIVATED BRIDGE RECTIFIERS
REVERSE VOLTAGE - 400 to 1000 Volts
FORWARD CURRENT - 8.0 Amperes
SEMICONDUCTOR
LITE-ON
REV. 5, Sep-2010, KBDG02
GBJ
810
1000
700
1000
GBJ
808
800
560
800
GBJ
806
600
420
600
GBJ
804
400
280
400
M
P
H
E
G
K
J
I
+
++
+
----
~
~~
~
~~
~
A
D
F
N
L
B
C
Q
O
All Dimensions in millimeter
DIM.
GBJ
MIN.
MAX.
A
C
D
E
F
G
H
B
29.70
30.30
20.30
19.70
17.0
18.0
4.70
10.80
11.20
2.30
2.70
3.10
3.40
4.40
3.80
M
L
K
J
I
4.80
3.40
0.80
0.60
2.00
2.40
0.90
1.10
7.70
7.30
N
9.80
10.20
P
Q
O
2.50
2.90
3.80
4.20
(3.0) x 45
4.90
GBJ
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GBJ808-BP | 制造商:Micro Commercial Components (MCC) 功能描述:Diode Rectifier Bridge Single 800V 8A 4-Pin(4+Tab) GBJ Bulk |
| GBJ808-F | 功能描述:橋式整流器 8.0A 800V RoHS:否 制造商:Vishay 產(chǎn)品:Single Phase Bridge 峰值反向電壓:1000 V 最大 RMS 反向電壓: 正向連續(xù)電流:4.5 A 最大浪涌電流:450 A 正向電壓下降:1 V 最大反向漏泄電流:10 uA 功率耗散: 最大工作溫度:+ 150 C 長度:30.3 mm 寬度:4.1 mm 高度:20.3 mm 安裝風格:Through Hole 封裝 / 箱體:SIP-4 封裝:Tube |
| GBJ810 | 功能描述:橋式整流器 1000V 8A RoHS:否 制造商:Vishay 產(chǎn)品:Single Phase Bridge 峰值反向電壓:1000 V 最大 RMS 反向電壓: 正向連續(xù)電流:4.5 A 最大浪涌電流:450 A 正向電壓下降:1 V 最大反向漏泄電流:10 uA 功率耗散: 最大工作溫度:+ 150 C 長度:30.3 mm 寬度:4.1 mm 高度:20.3 mm 安裝風格:Through Hole 封裝 / 箱體:SIP-4 封裝:Tube |
| GBJ810-BP | 制造商:Micro Commercial Components (MCC) 功能描述:Diode Rectifier Bridge Single 1KV 8A 4-Pin(4+Tab) GBJ Bulk |
| GBJ810-F | 功能描述:橋式整流器 1000V 8A RoHS:否 制造商:Vishay 產(chǎn)品:Single Phase Bridge 峰值反向電壓:1000 V 最大 RMS 反向電壓: 正向連續(xù)電流:4.5 A 最大浪涌電流:450 A 正向電壓下降:1 V 最大反向漏泄電流:10 uA 功率耗散: 最大工作溫度:+ 150 C 長度:30.3 mm 寬度:4.1 mm 高度:20.3 mm 安裝風格:Through Hole 封裝 / 箱體:SIP-4 封裝:Tube |
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