參數(shù)資料
型號(hào)： GBJ1006
廠商： DIODES INC
元件分類： 橋式整流
英文描述： Aluminum Polymer SMT Capacitor; Capacitance: 1500uF; Voltage: 2.5V; Case Size: 10x8 mm; Packaging: Tape & Reel
中文描述： 10 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE
封裝： PLASTIC, GBJ, 4 PIN
文件頁(yè)數(shù)： 1/3頁(yè)
文件大小： 65K
代理商： GBJ1006
DS21218 Rev. 5 - 2
1 of 3
GBJ10005-GBJ1010
www.diodes.com
Diodes Incorporated
Features
Glass Passivated Die Construction
High Case Dielectric Strength of 1500VRMS
Low Reverse Leakage Current
Surge Overload Rating to 170A Peak
Ideal for Printed Circuit Board Applications
UL Listed Under Recognized Component Index, File Number
E94661
Available in Lead Free Finish/RoHS Compliant Version
(Note 4)
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Maximum Ratings and Electrical Characteristics @ TA = 25°C unless otherwise specified
GBJ10005 - GBJ1010
10A GLASS PASSIVATED BRIDGE RECTIFIER
Case: GBJ
Case Material: Molded Plastic - UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Plated Leads, Solderable per MIL-STD-202,
Method 208
Also Available in Lead Free Plating (Bright Tin Finish).
Please see Ordering Information, Note 6, on Page 3
Polarity: Molded on Body
Mounting: Through Hole for #6 Screw
Mounting Torque: 5.0 in-lbs Maximum
Marking: Type Number
Weight: 6.6 grams (approximate)
Mechanical Data
GBJ
Dim
Min
Max
A
29.70
30.30
B
19.70
20.30
C
17.00
18.00
D
3.80
4.20
E
7.30
7.70
G
9.80
10.20
H
2.00
2.40
I
0.90
1.10
J
2.30
2.70
K
3.0 X 45
°
L
4.40
4.80
M
3.40
3.80
N
3.10
3.40
P
2.50
2.90
R
0.60
0.80
S
10.80
11.20
All Dimensions in mm
_
B
C
D
EE
G
H
K
J
I
L
M
N
P
R
S
A
Characteristic
Symbol
GBJ
10005
GBJ
1001
GBJ
1002
GBJ
1004
GBJ
1006
GBJ
1008
GBJ
1010
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
50
100
200
400
600
800
1000
V
RMS Reverse Voltage
VR(RMS)
35
70
140
280
420
560
700
V
Average Forward Rectified Output Current
@ TC = 110
°C
IO
10
A
Non-Repetitive Peak Forward Surge Current, 8.3 ms single
half-sine-wave superimposed on rated load
(JEDEC method)
IFSM
170
A
Forward Voltage per element
@ IF = 5.0A
VFM
1.05
V
Peak Reverse Current
@TC = 25
°C
at Rated DC Blocking Voltage
@ TC = 125
°C
IR
10
500
mA
I2t Rating for Fusing (t < 8.3ms) (Note 1)
I2t
120
A2s
Typical Junction Capacitance per Element (Note 2)
Cj
55
pF
Typical Thermal Resistance, Junction to Case (Note 3)
RqJC
1.4
°C/W
Operating and Storage Temperature Range
Tj,TSTG
-65 to +150
°C
Notes:
1. Non-repetitive, for t > 1.0ms and < 8.3ms.
2.
Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.
3. Thermal resistance from junction to case per element. Unit mounted on 150 x 150 x 1.6mm copper plate heat sink.
4. RoHS revision 13.2.2003. Glass and High Temperature Solder Exemptions Applied, see
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