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參數(shù)資料
| 型號： | GA4L4Z |
| 廠商： | NEC Corp. |
| 英文描述： | RESISTOR BUILT-IN TYPE NPN TRANSISTOR |
| 中文描述： | 電阻內(nèi)置型NPN晶體管 |
| 文件頁數(shù)： | 8/22頁 |
| 文件大?。?/td> | 370K |
| 代理商： | GA4L4Z |
Data Sheet D16494EJ2V0DS
8
GA4xxx
[GA4L3N]
TYPICAL CHARACTERISTICS (T
A
= 25°C)
COLLECTOR TO EMITTER VOLTAGE vs.
COLLECTOR CURRENT
2
0
0
10
20
30
40
50
4
6
8
10
V
CE
- Collector to Emitter Voltage - V
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
I
C
I
B
= 380 A
330 A
280 A
230 A
180 A
μ
130 A
80 A
V
C
0
0.1
0.2
0.3
0.4
0.5
0
20
40
60
80
100
V
IN
= 5.0 V
10.0 V
15.0 V
I
C
- Collector Current - mA
DC CURRENT GAIN vs. COLLECTOR CURRENT
COLLECTOR SATURATION VOLTAGE vs.
COLLECTOR CURRENT
h
F
1
10
100
1000
1
10
100
V
CE
= 5.0 V
T
A
= 75°C
25°C
25°C
I
C
- Collector Current - mA
V
C
0.01
0.1
1
1
10
100
I
C
= 10
I
B
T
A
= 75°C
25°C
25°C
I
C
- Collector Current - mA
INPUT VOLTAGE vs. COLLECTOR CURRENT
COLLECTOR CURRENT vs. INPUT VOLTAGE
V
I
0.1
1
10
100
1
10
100
V
CE
= 0.2 V
T
A
=
25°C
25°C
75°C
I
C
- Collector Current - mA
I
C
μ
A
1
10
100
1000
0.4
0.6
0.8
1
1.2
V
CE
= 5.0 V
25°C
25°C
T
A
= 75°C
V
IN
- Input Voltage - V
RESISTER vs. AMBIENT TEMPERATURE
R
0
4
8
12
16
20
-25
0
25
50
75
100
R
2
R
1
T
A
- Ambient Temperature - °C
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