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參數(shù)資料
| 型號： | FUO22-12N |
| 廠商： | IXYS CORP |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Three Phase Rectifier Bridge in ISOPLUS i4-PACTM |
| 中文描述： | 3 PHASE, 28 A, 1200 V, SILICON, BRIDGE RECTIFIER DIODE |
| 封裝： | ISOPLUS, I4PAC-5 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 32K |
| 代理商： | FUO22-12N |
2001 IXYS All rights reserved
1 - 2
1
V
RRM
I
D(AV)M
= 27 A
I
FSM
= 100 A
= 1200 V
Three Phase
Rectifier Bridge
in ISOPLUS i4-PAC
TM
FUO 22-12N
Features
rectifier diodes for line frequency
ISOPLUS i4-PAC
TM
package
- isolated back surface
- UL registered E 72873
- low coupling capacity between pins
and heatsink
- enlarged creepage towards heatsink
- application friendly pinout
- high reliability
- industry standard outline
Applications
three phase mains rectifiers
Rectifier Bridge
Symbol
Conditions
Maximum Ratings
V
RRM
1200
V
I
FAV
I
D(AV)M
I
FSM
T
C
= 90°C; sine 180° (per diode)
T
C
= 90°C
T
VJ
= 25°C; t = 10 ms; sine 50 Hz
10
27
100
A
A
A
P
tot
T
C
= 25°C
(per diode)
30
W
Symbol
Conditions
Characteristic Values
(T
VJ
= 25
°
C, unless otherwise specified)
min.
typ.
max.
V
F
I
F
= 15 A; T
VJ
= 25°C
T
VJ
= 125°C
1.2
1.2
1.3
V
V
I
R
V
R
= V
;
T
VJ
= 25°C
T
VJ
= 125°C
5
μA
mA
0.2
R
thJC
R
thJH
(per diode)
4 K/W
K/W
5
Data according to IEC 60747 and refer to a single diode unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions.
1
5
Preliminary Data
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