參數資料
型號: FT0408BI00
廠商: Electronic Theatre Controls, Inc.
英文描述: CA-BAYONET
中文描述: 邏輯層次可控硅
文件頁數: 3/4頁
文件大小: 133K
代理商: FT0408BI00
Jul - 02
Fig. 1: Maximum RMS power dissipation
versus RMS on-state current.
0
20
7
6
5
4
3
2
1
0
40
60
80
100 120 140
P (W)
Fig. 2: Correlation between maximum
RMS power dissipation and maximum
allowable temperature (Tamb and T case).
T case (oC)
-75
-85
-95
-105
-115
-125
Fig. 3: RMS on-state current versus case
temperature.
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
Igt (Tj)
Igt (Tj = 25 oC)
Fig. 5: Relative variation of gate trigger current
and holding current versus junction temperature.
-40 -20
0
60
80 100 120 140
Ih (Tj)
Ih (Tj = 25 oC)
40
20
1
10
100
1000
Fig. 6: Non repetitive surge peak on-state
current versus number of cycles.
20
15
10
5
0
I TSM (A)
Tj initial = 25 oC
1.00
0.10
0.01
Zth(j-a) / Rth(j-a)
Fig. 4: Relative variation of thermal impedance
junction to ambient versus pulse duration.
1E-3
1E-2
1E-1
1E+0
1E+1
1E+2 5E+2
FT04...I
LOGIC LEVEL TRIAC
1
0.8
0.6
0.4
0.2
0
I T(RMS) (A)
0
20
40
60
80
100
120
α
= 180 o
10
30
50
70
90
110
130
Igt
Ih
0
1
7
6
5
4
3
2
1
0
2
3
4
P (W)
α
180 o
α
Tamb (oC)
Tj (oC)
Number of cycles
tp (s)
Tamb (oC)
IT(RMS)(A)
α
= 30 o
α
= 60 o
α
= 90 o
α
= 120 o
α
= 180 o
Rth (j-a)
Rth (j-c)
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