型號(hào): | FSS9130R3 |
廠商: | HARRIS SEMICONDUCTOR |
元件分類: | JFETs |
英文描述: | 6A, -100V, 0.660 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs |
中文描述: | 6 A, 100 V, 0.66 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-257AA |
封裝: | HERMETIC SEALED, METAL, TO-257AA, 3 PIN |
文件頁數(shù): | 7/8頁 |
文件大?。?/td> | 44K |
代理商: | FSS9130R3 |
相關(guān)PDF資料 |
PDF描述 |
---|---|
FSS9130R4 | 6A, -100V, 0.660 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs |
FSS913A0R1 | 10A, -100V, 0.280 Ohm, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs |
FSS913A0R3 | 10A, -100V, 0.280 Ohm, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs |
FSS913A0D | 10A, -100V, 0.280 Ohm, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs |
FSS913A0R | 10A, -100V, 0.280 Ohm, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
---|---|
FSS9130R4 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:6A, -100V, 0.660 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs |
FSS913A0D | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:10A, -100V, 0.280 Ohm, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs |
FSS913A0D1 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:10A, -100V, 0.280 Ohm, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs |
FSS913A0D3 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:10A, -100V, 0.280 Ohm, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs |
FSS913A0R | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:10A, -100V, 0.280 Ohm, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs |