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參數(shù)資料
| 型號(hào)： | FSS234R1 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 6A, 250V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs |
| 中文描述： | 6 A, 250 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA |
| 封裝： | HERMETIC SEALED, METAL, TO-257AA, 3 PIN |
| 文件頁(yè)數(shù)： | 4/8頁(yè) |
| 文件大?。?/td> | 45K |
| 代理商： | FSS234R1 |
3-86
FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. BASIC GATE CHARGE WAVEFORM
FIGURE 6. NORMALIZED r
DS(ON)
vs JUNCTION TEMPERATURE
FIGURE 7. NORMALIZED MAXIMUM TRANSIENT THERMAL RESPONSE
Typical Performance Curves
Unless Otherwise Specified
(Continued)
I
D
,
150
100
50
0
T
C
, CASE TEMPERATURE (
o
C)
-50
0
8
6
4
2
10
1
1
0.1
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
10
100
700
50
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
100ms
100
μ
s
1ms
10ms
T
C
= 25
o
C
CHARGE
Q
GD
Q
G
V
G
Q
GS
12V
2.5
2.0
1.5
1.0
0.5
0.0
-80
-40
0
40
80
120
160
T
J
, JUNCTION TEMPERATURE (
o
C)
N
D
PULSE DURATION = 250ms, V
GS
= 12V, I
D
= 4A
N
1
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t, RECTANGULAR PULSE DURATION (s)
T
θ
J
)
0.001
0.01
0.1
10
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θ
JC
+ T
C
P
DM
t
1
t
2
SINGLE PULSE
0.02
0.01
0.1
0.05
0.5
0.2
FSS234D, FSS234R
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| FSS234R3 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:6A, 250V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs |
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