- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄370242 > FSGYC264D1 TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 44A I(D) | SMT PDF資料下載
參數(shù)資料
| 型號： | FSGYC264D1 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 44A I(D) | SMT |
| 中文描述： | 晶體管| MOSFET的| N溝道| 250V五（巴西）直|第44A（?。﹟貼片 |
| 文件頁數(shù)： | 3/7頁 |
| 文件大?。?/td> | 109K |
| 代理商： | FSGYC264D1 |
2001 Fairchild Semiconductor Corporation
FSGYC063R Rev. B
Source to Drain Diode Specifications
PARAMETER
SYMBOL
V
SD
t
rr
Q
RR
TEST CONDITIONS
MIN
-
-
-
TYP
-
-
0.32
MAX
1.2
140
-
UNITS
V
ns
μ
C
Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
SD
= 70A
I
SD
= 70A, dI
SD
/dt = 100A/
μ
s
Electrical Specifications up to 100K RAD
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
Drain to Source Breakdown Volts
(Note 3)
Gate to Source Threshold Volts
(Note 3)
Gate to Body Leakage
(Notes 2, 3)
Zero Gate Leakage
(Note 3)
Drain to Source On-State Volts
(Notes 1, 3)
Drain to Source On Resistance
(Notes 1, 3)
NOTES:
1. Pulse test, 300
μ
s Max.
2. Absolute value.
3. Insitu Gamma bias must be sampled for both V
GS
= 12V, V
DS
= 0V and V
GS
= 0V, V
DS
= 80% BV
DSS
.
SYMBOL
BV
DSS
V
GS(TH)
I
GSS
I
DSS
V
DS(ON)
r
DS(ON)12
TEST CONDITIONS
V
GS
= 0, I
D
= 1mA
V
GS
= V
DS
, I
D
= 1mA
V
GS
=
±
24V, V
DS
= 0V
V
GS
= 0, V
DS
= 24V
V
GS
= 12V, I
D
= 70A
V
GS
= 12V, I
D
= 70A
MIN
30
2.0
-
-
-
-
MAX
-
4.5
100
25
0.280
0.004
UNITS
V
V
nA
μ
A
V
Single Event Effects (SEB, SEGR)
Note 4
TEST
SYMBOL
SEESOA
ENVIRONMENT
(NOTE 5)
(NOTE 6
)
TYPICAL LET
(MeV/mg/cm)
37
60
60
82
82
APPLIED
V
GS
BIAS
(V)
-5
-2
-5
0
-2
(NOTE 7)
MAXIMUM
V
DS
BIAS
(V)
30
30
22.5
24
22.5
TYPICAL RANGE (
μ
)
36
32
32
28
28
Single Event Effects Safe Operating Area
NOTES:
4. Testing conducted at Brookhaven National Labs or Texas A&M.
5. Fluence = 1E5 ions/cm
2
(typical), T = 25
o
C.
6. Ion Species: LET = 37, Br or Kr; LET = 60, I or Xe; LET = 82, Au
7. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR).
Performance Curves
Unless Otherwise Specified
FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA
FIGURE 2. TYPICAL SEE SIGNATURE CURVE
00
-5
V
D
V
GS
(V)
LET = 60MeV/mg/cm
2
, RANGE = 32
μ
LET = 82MeV/mg/cm
2
, RANGE = 28
μ
LET = 37MeV/mg/cm
2
, RANGE = 36
μ
40
10
20
30
-7
-6
-4
-3
-2
-1
TEMP = 25
o
C
40
00
V
D
LET = 82
LET = 60
30
20
10
4
8
12
V
GS
(V)
16
20
24
LET = 37
FSGYC063R
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FSH05A15 | Schottky Barrier Diode |
| FSH10A15 | Schottky Barrier Diode |
| FSL913AOR3 | TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 7A I(D) | TO-205AF |
| FSL913AOR4 | TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 7A I(D) | TO-205AF |
| FSL9230D4 | TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 3A I(D) | TO-205AF |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FSGYC264R3 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 44A I(D) | SMT |
| FSGYC264R4 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 44A I(D) | SMT |
| FSGYE033D1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 20A I(D) | SMT |
| FSGYE033R3 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 20A I(D) | SMT |
| FSGYE033R4 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 20A I(D) | SMT |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。