參數(shù)資料
型號(hào)： FSGL230R
廠商： Intersil Corporation
英文描述： Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs(抗輻射N溝道MOS場效應(yīng)管)
中文描述： 抗輻射，抗SEGR N溝道功率MOSFET（抗輻射?溝道馬鞍山場效應(yīng)管）
文件頁數(shù)： 3/8頁
文件大?。?/td> 79K
代理商： FSGL230R
3
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Forward Voltage
V
SD
t
rr
Q
RR
I
SD
= 8A
I
SD
= 8A, dI
SD
/dt = 100A/
μ
s
-
-
1.5
V
Reverse Recovery Time
-
-
210
ns
Reverse Recovery Charge
-
1.2
-
μ
C
Electrical Specifications up to 100K RAD
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
Drain to Source Breakdown Volts
(Note 3)
BV
DSS
V
GS(TH)
I
GSS
I
DSS
V
DS(ON)
r
DS(ON)12
V
GS
= 0, I
D
= 1mA
V
GS
= V
DS
, I
D
= 1mA
V
GS
=
±
30V, V
DS
= 0V
V
GS
= 0, V
DS
= 160V
V
GS
= 12V, I
D
= 8A
V
GS
= 12V, I
D
= 5A
200
-
V
Gate to Source Threshold Volts
(Note 3)
2.0
4.5
V
Gate to Body Leakage
(Notes 2, 3)
-
100
nA
Zero Gate Leakage
(Note 3)
-
25
μ
A
Drain to Source On-State Volts
(Notes 1, 3)
-
1.48
V
Drain to Source On Resistance
(Notes 1, 3)
-
0.180
NOTES:
1. Pulse test, 300
μ
s Max.
2. Absolute value.
3. Insitu Gamma bias must be sampled for both V
GS
= 12V, V
DS
= 0V and V
GS
= 0V, V
DS
= 80% BV
DSS
.
Single Event Effects (SEB, SEGR)
Note 4
TEST
SYMBOL
ENVIRONMENT
(NOTE 5)
APPLIED
V
GS
BIAS
(V)
(NOTE 6)
MAXIMUM
V
DS
BIAS (V)
200
ION
SPECIES
TYPICAL LET
(MeV/mg/cm)
TYPICAL
RANGE (
μ
)
Single Event Effects Safe Operating Area
SEESOA
Br
37
36
-20
I
60
32
-10
200
Au
82
28
-5
160
Au
82
28
-10
120
NOTES:
4. Testing conducted at Brookhaven National Labs.
5. Fluence = 1E5 ions/cm
2
(Typical), T = 25
o
C.
6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR).
Performance Curves
Unless Otherwise Specified
FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA
FIGURE 2. TYPICAL SEE SIGNATURE CURVE
120
80
40
00
-10
-15
-20
-25
-5
V
GS
(V)
160
200
LET = 60MeV/mg/cm
2
, RANGE = 32
μ
LET = 82MeV/mg/cm
2
, RANGE = 28
μ
LET = 37MeV/mg/cm
2
, RANGE = 36
μ
V
D
FLUENCE = 1E5 IONS/cm
2
(TYPICAL)
TEMP = 25
o
C
240
200
160
120
80
40
0
-30
0
-5
-10
-15
-20
-25
V
GS
(V)
V
D
LET = 82 GOLD
LET = 60 IODINE
LET = 37 BROMINE
-35
-40
FSGL230R
相關(guān)PDF資料
PDF描述
FSGL234R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs(抗輻射N溝道MOS場效應(yīng)管)
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FSGS230R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs(抗輻射N溝道MOS場效應(yīng)管)
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FSGM0465RBWDTU 功能描述:電源開關(guān) IC - 配電 SMPS Power Switch 4A, 650V RoHS:否 制造商:Exar 輸出端數(shù)量:1 開啟電阻（最大值）:85 mOhms 開啟時(shí)間（最大值）:400 us 關(guān)閉時(shí)間（最大值）:20 us 工作電源電壓:3.2 V to 6.5 V 電源電流（最大值）: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-23-5
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