參數(shù)資料
型號: FS12UMA-4A
廠商: Powerex Power Semiconductors
英文描述: Nch POWER MOSFET HIGH-SPEED SWITCHING USE
中文描述: N溝道功率MOSFET高速開關(guān)使用
文件頁數(shù): 2/4頁
文件大?。?/td> 44K
代理商: FS12UMA-4A
PRELIMINARY
Some parametric limits are subject to change.
Sep.1998
V
(BR) DSS
V
(BR) GSS
I
GSS
I
DSS
V
GS (th)
r
DS (ON)
V
DS (ON)
y
fs
C
iss
C
oss
C
rss
t
d (on)
t
r
t
d (off)
t
f
V
SD
R
th (ch-c)
MITSUBISHI Nch POWER MOSFET
FS12UMA-4A
HIGH-SPEED SWITCHING USE
V
V
μ
A
mA
V
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
200
±20
2.0
3.0
0.30
1.80
8.0
700
95
30
15
20
110
35
0.95
±10
1
4.0
0.40
2.40
2.50
ELECTRICAL CHARACTERISTICS
(Tch = 25°C)
Drain-source breakdown voltage
Gate-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Symbol
Unit
Parameter
Test conditions
Limits
Typ.
Min.
Max.
I
D
= 1mA, V
GS
= 0V
I
GS
= ±10
μ
A, V
DS
= 0V
V
GS
= ±20V, V
DS
= 0V
V
DS
= 200V, V
GS
= 0V
I
D
= 1mA, V
DS
= 10V
I
D
= 6A, V
GS
= 10V
I
D
= 6A, V
GS
= 10V
I
D
= 6A, V
DS
= 10V
V
DS
= 25V, V
GS
= 0V, f = 1MHz
V
DD
= 100V, I
D
= 6A, V
GS
= 10V, R
GEN
= R
GS
= 50
I
S
= 6A, V
GS
= 0V
Channel to case
PERFORMANCE CURVES
0
20
40
60
80
100
0
200
50
100
150
10
–1
10
0
2
3
5
7
10
1
2
3
5
7
2
3
5
2
10
1
3
5 7
2
10
2
3
5 7
2
10
3
3
5 7
5
7
2
100μs
tw = 10μs
1ms
10ms
DC
T
C
= 25°C
Single Pulse
0
4
8
12
16
20
0
4
8
12
16
20
V
GS
= 20V
10V
8V
P
D
= 50W
T
C
= 25°C
Pulse Test
5V
4V
6V
0
2
4
6
8
10
0
2
4
6
8
10
V
GS
= 20V
10V
8V
T
C
= 25°C
Pulse Test
4.0V
4.5V
P
D
= 50W
POWER DISSIPATION DERATING CURVE
CASE TEMPERATURE T
C
(°C)
P
D
MAXIMUM SAFE OPERATING AREA
DRAIN-SOURCE VOLTAGE V
DS
(V)
D
D
OUTPUT CHARACTERISTICS
(TYPICAL)
D
D
DRAIN-SOURCE VOLTAGE V
DS
(V)
OUTPUT CHARACTERISTICS
(TYPICAL)
D
D
DRAIN-SOURCE VOLTAGE V
DS
(V)
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