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參數(shù)資料
| 型號： | FRS130H |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 12A, 100V, 0.195 Ohm, Rad Hard, N-Channel Power MOSFETs |
| 中文描述： | 0.195 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA |
| 封裝： | HERMETIC SEALED, METAL, TO-257AA, 3 PIN |
| 文件頁數(shù)： | 3/6頁 |
| 文件大?。?/td> | 48K |
| 代理商： | FRS130H |
4-3
Post-Radiation Electrical Specifications
TC = +25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TYPE
TEST CONDITIONS
LIMITS
UNITS
MIN
MAX
Drain-Source
Breakdown Volts
(Note 4, 6)
BVDSS
FRS130D, R
VGS = 0, ID = 1mA
100
-
V
(Note 5, 6)
BVDSS
FRS130H
VGS = 0, ID = 1mA
95
-
V
Gate-Source
Threshold Volts
(Note 4, 6)
VGS(th)
FRS130D, R
VGS = VDS, ID = 1mA
2.0
4.0
V
(Note 3, 5, 6)
VGS(th)
FRS130H
VGS = VDS, ID = 1mA
1.5
4.5
V
Gate-Body
Leakage Forward
(Note 4, 6)
IGSSF
FRS130D, R
VGS = 20V, VDS = 0
-
100
nA
(Note 5, 6)
IGSSF
FRS130H
VGS = 20V, VDS = 0
-
200
nA
Gate-Body
Leakage Reverse
(Note 2, 4, 6)
IGSSR
FRS130D, R
VGS = -20V, VDS = 0
-
100
nA
(Note 2, 5, 6)
IGSSR
FRS130H
VGS = -20V, VDS = 0
-
200
nA
Zero-Gate Voltage
Drain Current
(Note 4, 6)
IDSS
FRS130D, R
VGS = 0, VDS = 80V
-
25
μ
A
(Note 5, 6)
IDSS
FRS130H
VGS = 0, VDS = 80V
-
100
μ
A
Drain-Source
On-State Volts
(Note 1, 4, 6)
VDS(on)
FRS130D, R
VGS = 10V, ID = 12A
-
2.46
V
(Note 1, 5, 6)
VDS(on)
FRS130H
VGS = 16V, ID = 12A
-
3.69
V
Drain-Source
On Resistance
(Note 1, 4, 6)
RDS(on)
FRS130D, R
VGS = 10V, ID = 7A
-
0.195
(Note 1, 5, 6)
RDS(on)
FRS130H
VGS = 14V, ID = 7A
-
0.293
NOTES:
1. Pulse test, 300
μ
s max
2. Absolute value
3. Gamma = 300KRAD(Si)
4. Gamma = 10KRAD(Si) for “D”, 100KRAD(Si) for “R”. Neutron = 3E13
5. Gamma = 1000KRAD(Si). Neutron = 3E13
6. Insitu Gamma bias must be sampled for both VGS = +10V, VDS = 0V and VGS = 0V, VDS = 80% BVDSS
7. Gamma data taken 4/17/90 on TA 17631 devices by GE ASTRO SPACE; EMC/SURVIVABILITY LABORATORY; KING OF PRUSSIA,
PA 19401
8. Single event drain burnout testing by Titus, J.L., et al of NWSC, Crane, IN at Brookhaven Nat. Lab. Dec 11-14, 1989
9. Neutron derivation, Intersil Application note AN-8831, Oct. 1988
FRS130D, FRS130R, FRS130H
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FRS130R | 12A, 100V, 0.195 Ohm, Rad Hard, N-Channel Power MOSFETs |
| FRS140D | 17A, 100V, 0.145 Ohm, Rad Hard,N-Channel Power MOSFETs(17A, 100V, 0.145Ω,抗輻射N溝道功率MOS場效應(yīng)管) |
| FRS140H | 17A, 100V, 0.145 Ohm, Rad Hard,N-Channel Power MOSFETs(17A, 100V, 0.145Ω,抗輻射N溝道功率MOS場效應(yīng)管) |
| FRS140R | 17A, 100V, 0.145 Ohm, Rad Hard,N-Channel Power MOSFETs(17A, 100V, 0.145Ω,抗輻射N溝道功率MOS場效應(yīng)管) |
| FRS200BA50 | DIODE MODULE FRD |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FRS130R | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:12A, 100V, 0.195 Ohm, Rad Hard, N-Channel Power MOSFETs |
| FRS14 | 制造商:FCI 制造商全稱:First Components International 功能描述:1.0 Amp FAST RECOVERY RECTIFIERS Mechanical Dimensions |
| FRS140D | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:17A, 100V, 0.145 Ohm, Rad Hard, N-Channel Power MOSFETs |
| FRS140H | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:17A, 100V, 0.145 Ohm, Rad Hard, N-Channel Power MOSFETs |
| FRS140R | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:17A, 100V, 0.145 Ohm, Rad Hard, N-Channel Power MOSFETs |
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