參數(shù)資料
型號(hào)： FRM9240H
廠商： INTERSIL CORP
元件分類： JFETs
英文描述： 7A, -200V, 0.720 Ohm, Rad Hard, P-Channel Power MOSFETs
中文描述： 7 A, 200 V, 0.72 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA
文件頁數(shù)： 3/6頁
文件大小： 47K
代理商： FRM9240H
4-3
Post-Radiation Electrical Specifications
TC = +25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TYPE
TEST CONDITIONS
LIMITS
UNITS
MIN
MAX
Drain-Source
Breakdown Volts
(Note 4, 6)
BVDSS
FRM9240D, R
VGS = 0, ID = 1mA
-200
-
V
(Note 5, 6)
BVDSS
FRM9240H
VGS = 0, ID = 1mA
-190
-
V
Gate-Source
Threshold Volts
(Note 4, 6)
VGS(th)
FRM9240D, R
VGS = VDS, ID = 1mA
-2.0
-4.0
V
(Note 3, 5, 6)
VGS(th)
FRM9240H
VGS = VDS, ID = 1mA
-2.0
-6.0
V
Gate-Body
Leakage Forward
(Note 4, 6)
IGSSF
FRM9240D, R
VGS = -20V, VDS = 0
-
100
nA
(Note 5, 6)
IGSSF
FRM9240H
VGS = -20V, VDS = 0
-
200
nA
Gate-Body
Leakage Reverse
(Note 2, 4, 6)
IGSSR
FRM9240D, R
VGS = 20V, VDS = 0
-
100
nA
(Note 2, 5, 6)
IGSSR
FRM9240H
VGS = 20V, VDS = 0
-
200
nA
Zero-Gate Voltage
Drain Current
(Note 4, 6)
IDSS
FRM9240D, R
VGS = 0, VDS = -160V
-
25
μ
A
(Note 5, 6)
IDSS
FRM9240H
VGS = 0, VDS = -160V
-
100
μ
A
Drain-Source
On-State Volts
(Note 1, 4, 6)
VDS(on)
FRM9240D, R
VGS = -10V, ID = 7A
-
-5.29
V
(Note 1, 5, 6)
VDS(on)
FRM9240H
VGS = -16V, ID = 7A
-
-7.94
V
Drain-Source
On Resistance
(Note 1, 4, 6)
RDS(on)
FRM9240D, R
VGS = -10V, ID = 4A
-
0.720
(Note 1, 5, 6)
RDS(on)
FRM9240H
VGS = -14V, ID = 4A
-
1.08
NOTES:
1. Pulse test, 300
μ
s max
2. Absolute value
3. Gamma = 300KRAD(Si)
4. Gamma = 10KRAD(Si) for “D”, 100KRAD(Si) for “R”. Neutron = 1E13
5. Gamma = 1000KRAD(Si). Neutron = 1E13
6. Insitu Gamma bias must be sampled for both VGS = -10V, VDS = 0V and VGS = 0V, VDS = 80% BVDSS
7. Gamma data taken 7/13/90 on TA 17742 devices by GE ASTRO SPACE; EMC/SURVIVABILITY LABORATORY; KING OF PRUSSIA,
PA 19401
8. Single event drain burnout testing by Titus, J.L., et al of NWSC, Crane, IN at Brookhaven Nat. Lab. Dec 11-14, 1989
9. Neutron derivation, INTERSIL Application note AN-8831, Oct. 1988
FRM9240D, FRM9240R, FRM9240H
相關(guān)PDF資料
PDF描述
FRM9240R 7A, -200V, 0.720 Ohm, Rad Hard, P-Channel Power MOSFETs
FRM9250D 16A, -200V, 0.300 Ohm, Rad Hard, P-Channel Power MOSFETs
FRM9250H 16A, -200V, 0.300 Ohm, Rad Hard, P-Channel Power MOSFETs
FRM9250R 16A, -200V, 0.300 Ohm, Rad Hard, P-Channel Power MOSFETs
FRP1015 Ultra-fast POWER planar⑩ Rectifiers 10-20 A, 50-200 V
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FRM9240R 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:7A, -200V, 0.720 Ohm, Rad Hard, P-Channel Power MOSFETs
FRM9250D 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:16A, -200V, 0.300 Ohm, Rad Hard, P-Channel Power MOSFETs
FRM9250H 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:16A, -200V, 0.300 Ohm, Rad Hard, P-Channel Power MOSFETs
FRM9250R 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:16A, -200V, 0.300 Ohm, Rad Hard, P-Channel Power MOSFETs
FRME1 功能描述:電線導(dǎo)管 Rack Mount Enclosure 1 RU RoHS:否 制造商:Panduit 類型:Slotted SideWall Open finger design wiring cut 材料:Polypropylene 顏色:Light Gray 大小: 最大光束直徑: 抗拉強(qiáng)度: 外部導(dǎo)管寬度:25 mm 外部導(dǎo)管高度:25 mm
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*