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參數資料
| 型號： | FRM450D |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 10 A, 500 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA |
| 文件頁數： | 3/8頁 |
| 文件大?。?/td> | 86K |
| 代理商： | FRM450D |
2001 Fairchild Semiconductor Corporation
FRM450D, FRM450R, FRM450H Rev. A
Post-Radiation Electrical Specifications
TC = +25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TYPE
TEST CONDITIONS
LIMITS
UNITS
MIN
MAX
Drain-Source
Breakdown Volts
(Note 4, 6)
BVDSS
FRM450D, R
VGS = 0, ID = 1mA
500
-
V
(Note 5, 6)
BVDSS
FRM450H
VGS = 0, ID = 1mA
475
-
V
Gate-Source
Threshold Volts
(Note 4, 6)
VGS(th)
FRM450D, R
VGS = VDS, ID = 1mA
2.0
4.0
V
(Note 3, 5, 6)
VGS(th)
FRM450H
VGS = VDS, ID = 1mA
1.5
4.5
V
Gate-Body
Leakage Forward
(Note 4, 6)
IGSSF
FRM450D, R
VGS = 20V, VDS = 0
-
100
nA
(Note 5, 6)
IGSSF
FRM450H
VGS = 20V, VDS = 0
-
200
nA
Gate-Body
Leakage Reverse
(Note 2, 4, 6)
IGSSR
FRM450D, R
VGS = -20V, VDS = 0
-
100
nA
(Note 2, 5, 6)
IGSSR
FRM450H
VGS = -20V, VDS = 0
-
200
nA
Zero-Gate Voltage
Drain Current
(Note 4, 6)
IDSS
FRM450D, R
VGS = 0, VDS = 400V
-
25
μ
A
(Note 5, 6)
IDSS
FRM450H
VGS = 0, VDS = 400V
-
100
μ
A
Drain-Source
On-State Volts
(Note 1, 4, 6)
VDS(on)
FRM450D, R
VGS = 10V, ID = 10A
-
6.3
V
(Note 1, 5, 6)
VDS(on)
FRM450H
VGS = 16V, ID = 10A
-
9.0
V
Drain-Source
On Resistance
(Note 1, 4, 6)
RDS(on)
FRM450D, R
VGS = 10V, ID = 6A
-
0.600
(Note 1, 5, 6)
RDS(on)
FRM450H
VGS = 14V, ID = 6A
-
0.860
NOTES:
1. Pulse test, 300
2. Absolute value
3. Gamma = 300KRAD(Si)
4. Gamma = 10KRAD(Si) for “D”, 100KRAD(Si) for “R”. Neutron = 3E12
5. Gamma = 1000KRAD(Si). Neutron = 3E12
6. Insitu Gamma bias must be sampled for both VGS = +10V, VDS = 0V and VGS = 0V, VDS = 80% BVDSS
7. Gamma data taken 12/18/89 on TA 17655 devices by GE ASTRO SPACE; EMC/SURVIVABILITY LABORATORY; KING OF PRUSSIA,
PA 19401
8. Single event drain burnout testing by Titus, J.L., et al of NWSC, Crane, IN at Brookhaven Nat. Lab. Dec 11-14, 1989
9. Neutron derivation, INTERSIL Application note AN-8831, Oct. 1988
μ
s max
FRM450D, FRM450R, FRM450H
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