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參數(shù)資料
| 型號(hào)： | FRM430R |
| 廠商： | INTERSIL CORP |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 3A, 500V, 2.50 Ohm, Rad Hard, N-Channel Power MOSFETs |
| 中文描述： | 3 A, 500 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大?。?/td> | 48K |
| 代理商： | FRM430R |
4-2
Pre-Radiation Electrical Specifications
TC = +25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN
MAX
Drain-Source Breakdown Volts
BVDSS
VGS = 0, ID = 1mA
500
-
V
Gate-Threshold Volts
VGS(th)
VDS = VGS, ID = 1mA
2.0
4.0
V
Gate-body Leakage Forward
IGSSF
VGS = +20V
-
100
nA
Gate-Body Leakage Reverse
IGSSR
VGS = -20V
-
100
nA
Zero-Gate Voltage
Drain Current
IDSS1
IDSS2
IDSS3
VDS = 500V, VGS = 0
VDS = 400V, VGS = 0
VDS = 400V, VGS = 0, TC = +125
o
C
-
-
-
1
0.025
0.25
mA
Rated Avalanche Current
IAR
Time = 20
μ
s
-
9
A
Drain-Source On-State Volts
VDS(on)
VGS = 10V, ID = 3A
-
7.88
V
Drain-source On Resistance
RDS(on)
VGS = 10V, ID = 2A
-
2.50
Turn-On Delay Time
td(on)
VDD = 250V, ID = 3A
-
42
ns
Rise Time
tr
Pulse Width = 3
μ
s
-
66
Turn-Off Delay Time
td(off)
Period = 300
μ
s, Rg = 25
-
182
Fall Time
tf
0
≤
VGS
≤
10 (See Test Circuit)
-
52
Gate-Charge Threshold
QG(th)
VDD = 250V, ID = 3A
IGS1 = IGS2
0
≤
VGS
≤
20
1
4
nc
Gate-Charge On State
QG(on)
15
64
Gate-Charge Total
QGM
32
128
Plateau Voltage
VGP
3
14
V
Gate-Charge Source
QGS
3
12
nc
Gate-Charge Drain
QGD
8
34
Diode Forward Voltage
VSD
ID = 3A, VGD = 0
0.6
1.8
V
Reverse Recovery Time
TT
I = 3A; di/dt = 100A/
μ
s
-
1000
ns
Junction-To-Case
R
θ
jc
-
1.67
o
C/W
Junction-To-Ambient
R
θ
ja
Free Air Operation
-
60
FIGURE 1. RESISTIVE SWITCHING TEST CIRCUIT
FIGURE 2. UNCLAMPED ENERGY TEST CIRCUIT
V
DS
DUT
R
GS
0V
V
GS
= 12V
V
DD
R
L
t
P
V
GS
≤
20V
L
+
-
V
DS
V
DD
DUT
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
0V
50
50
50V-150V
I
AS
+
-
ELECTRONIC SWITCH OPENS
WHEN I
AS
IS REACHED
CURRENT
TRANSFORMER
FRM430D, FRM430R, FRM430H
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FRM440H | 6A, 500V, 1.40 Ohm, Rad Hard,N-Channel Power MOSFETs(6A, 500V, 1.40 Ω,抗輻射N(xiāo)溝道功率MOS場(chǎng)效應(yīng)管) |
| FRM440D | 6A, 500V, 1.40 Ohm, Rad Hard, N-Channel Power MOSFETs |
| FRM450D | 10A, 500V, 0.600 Ohm, Rad Hard,N-Channel Power MOSFETs(10A, 500V, 0.600 Ω,抗輻射N(xiāo)溝道功率MOS場(chǎng)效應(yīng)管) |
| FRM450H | 10A, 500V, 0.600 Ohm, Rad Hard,N-Channel Power MOSFETs(10A, 500V, 0.600 Ω,抗輻射N(xiāo)溝道功率MOS場(chǎng)效應(yīng)管) |
| FRM450R | 10A, 500V, 0.600 Ohm, Rad Hard,N-Channel Power MOSFETs(10A, 500V, 0.600 Ω,抗輻射N(xiāo)溝道功率MOS場(chǎng)效應(yīng)管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FRM440D | 制造商:INTERSIL 制造商全稱(chēng):Intersil Corporation 功能描述:6A, 500V, 1.40 Ohm, Rad Hard, N-Channel Power MOSFETs |
| FRM440H | 制造商:INTERSIL 制造商全稱(chēng):Intersil Corporation 功能描述:6A, 500V, 1.40 Ohm, Rad Hard, N-Channel Power MOSFETs |
| FRM440R | 制造商:INTERSIL 制造商全稱(chēng):Intersil Corporation 功能描述:6A, 500V, 1.40 Ohm, Rad Hard, N-Channel Power MOSFETs |
| FRM440R4 | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 6A I(D) | TO-204AA |
| FRM450D | 制造商:INTERSIL 制造商全稱(chēng):Intersil Corporation 功能描述:10A, 500V, 0.600 Ohm, Rad Hard, N-Channel Power MOSFETs |
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