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參數資料
| 型號： | FRM430H |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 3A, 500V, 2.50 Ohm, Rad Hard, N-Channel Power MOSFETs |
| 中文描述： | 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA |
| 封裝： | HERMETIC SEALED, METAL, TO-204AA, 2 PIN |
| 文件頁數： | 3/6頁 |
| 文件大?。?/td> | 48K |
| 代理商： | FRM430H |
4-3
Post-Radiation Electrical Specifications
TC = +25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TYPE
TEST CONDITIONS
LIMITS
UNITS
MIN
MAX
Drain-Source
Breakdown Volts
(Note 4, 6)
BVDSS
FRM430D, R
VGS = 0, ID = 1mA
500
-
V
(Note 5, 6)
BVDSS
FRM430H
VGS = 0, ID = 1mA
475
-
V
Gate-Source
Threshold Volts
(Note 4, 6)
VGS(th)
FRM430D, R
VGS = VDS, ID = 1mA
2.0
4.0
V
(Note 3, 5, 6)
VGS(th)
FRM430H
VGS = VDS, ID = 1mA
1.5
4.5
V
Gate-Body
Leakage Forward
(Note 4, 6)
IGSSF
FRM430D, R
VGS = 20V, VDS = 0
-
100
nA
(Note 5, 6)
IGSSF
FRM430H
VGS = 20V, VDS = 0
-
200
nA
Gate-Body
Leakage Reverse
(Note 2, 4, 6)
IGSSR
FRM430D, R
VGS = -20V, VDS = 0
-
100
nA
(Note 2, 5, 6)
IGSSR
FRM430H
VGS = -20V, VDS = 0
-
200
nA
Zero-Gate Voltage
Drain Current
(Note 4, 6)
IDSS
FRM430D, R
VGS = 0, VDS = 400V
-
25
μ
A
(Note 5, 6)
IDSS
FRM430H
VGS = 0, VDS = 400V
-
100
μ
A
Drain-Source
On-state Volts
(Note 1, 4, 6)
VDS(on)
FRM430D, R
VGS = 10V, ID = 3A
-
7.88
V
(Note 1, 5, 6)
VDS(on)
FRM430H
VGS = 16V, ID = 3A
-
11.81
V
Drain-Source
On Resistance
(Note 1, 4, 6)
RDS(on)
FRM430D, R
VGS = 10V, ID = 2A
-
2.50
(Note 1, 5, 6)
RDS(on)
FRM430H
VGS = 14V, ID = 2A
-
3.75
NOTES:
1. Pulse test, 300
μ
s max
2. Absolute value
3. Gamma = 300KRAD(Si)
4. Gamma = 10KRAD(Si) for “D”, 100KRAD(Si) for “R”. Neutron = 3E12
5. Gamma = 1000KRAD(Si). Neutron = 3E12
6. Insitu Gamma bias must be sampled for both VGS = +10V, VDS = 0V and VGS = 0V, VDS = 80% BVDSS
7. Gamma data taken 10/29/90 on TA17635 devices by GE ASTRO SPACE; EMC/SURVIVABILITY LABORATORY; KING OF PRUSSIA,
PA 19401
8. Single event drain burnout testing by Titus, J.L., et al of NWSC, Crane, IN at Brookhaven Nat. Lab. Dec 11-14, 1989
9. Neutron derivation, Intersil Application note AN-8831, Oct. 1988
FRM430D, FRM430R, FRM430H
相關PDF資料 |
PDF描述 |
|---|---|
| FRM430R | 3A, 500V, 2.50 Ohm, Rad Hard, N-Channel Power MOSFETs |
| FRM440H | 6A, 500V, 1.40 Ohm, Rad Hard,N-Channel Power MOSFETs(6A, 500V, 1.40 Ω,抗輻射N溝道功率MOS場效應管) |
| FRM440D | 6A, 500V, 1.40 Ohm, Rad Hard, N-Channel Power MOSFETs |
| FRM450D | 10A, 500V, 0.600 Ohm, Rad Hard,N-Channel Power MOSFETs(10A, 500V, 0.600 Ω,抗輻射N溝道功率MOS場效應管) |
| FRM450H | 10A, 500V, 0.600 Ohm, Rad Hard,N-Channel Power MOSFETs(10A, 500V, 0.600 Ω,抗輻射N溝道功率MOS場效應管) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| FRM430R | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:3A, 500V, 2.50 Ohm, Rad Hard, N-Channel Power MOSFETs |
| FRM440D | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:6A, 500V, 1.40 Ohm, Rad Hard, N-Channel Power MOSFETs |
| FRM440H | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:6A, 500V, 1.40 Ohm, Rad Hard, N-Channel Power MOSFETs |
| FRM440R | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:6A, 500V, 1.40 Ohm, Rad Hard, N-Channel Power MOSFETs |
| FRM440R4 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 6A I(D) | TO-204AA |
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