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參數(shù)資料
| 型號(hào)： | FRF450H |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 9A, 500V, 0.615 Ohm, Rad Hard, N-Channel Power MOSFETs |
| 中文描述： | 0.615 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA |
| 封裝： | HERMETIC SEALED, METAL, TO-254AA, 3 PIN |
| 文件頁(yè)數(shù)： | 3/6頁(yè) |
| 文件大?。?/td> | 48K |
| 代理商： | FRF450H |
4-3
Post-Radiation Electrical Specifications
TC = +25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TYPE
TEST CONDITIONS
LIMITS
UNITS
MIN
MAX
Drain-Source
Breakdown Volts
(Note 4, 6)
BVDSS
FRF450D, R
VGS = 0, ID = 1mA
500
-
V
(Note 5, 6)
BVDSS
FRF450H
VGS = 0, ID = 1mA
475
-
V
Gate-Source
Threshold Volts
(Note 4, 6)
VGS(th)
FRF450D, R
VGS = VDS, ID = 1mA
2.0
4.0
V
(Note 3, 5, 6)
VGS(th)
FRF450H
VGS = VDS, ID = 1mA
1.5
4.5
V
Gate-Body
Leakage Forward
(Note 4, 6)
IGSSF
FRF450D, R
VGS = 20V, VDS = 0
-
100
nA
(Note 5, 6)
IGSSF
FRF450H
VGS = 20V, VDS = 0
-
200
nA
Gate-Body
Leakage Reverse
(Note 2, 4, 6)
IGSSR
FRF450D, R
VGS = -20V, VDS = 0
-
100
nA
(Note 2, 5, 6)
IGSSR
FRF450H
VGS = -20V, VDS = 0
-
200
nA
Zero-Gate Voltage
Drain Current
(Note 4, 6)
IDSS
FRF450D, R
VGS = 0, VDS = 400V
-
25
μ
A
(Note 5, 6)
IDSS
FRF450H
VGS = 0, VDS = 400V
-
100
μ
A
Drain-Source
On-State Volts
(Note 1, 4, 6)
VDS(on)
FRF450D, R
VGS = 10V, ID = 9A
-
5.81
V
(Note 1, 5, 6)
VDS(on)
FRF450H
VGS = 16V, ID = 9A
-
8.30
V
Drain-Source
On Resistance
(Note 1, 4, 6)
RDS(on)
FRF450D, R
VGS = 10V, ID = 6A
-
0.615
(Note 1, 5, 6)
RDS(on)
FRF450H
VGS = 14V, ID = 6A
-
0.879
NOTES:
1. Pulse test, 300
μ
s max
2. Absolute value
3. Gamma = 300KRAD(Si)
4. Gamma = 10KRAD(Si) for “D”, 100KRAD(Si) for “R”. Neutron = 3E12
5. Gamma = 1000KRAD(Si). Neutron = 3E12
6. Insitu Gamma bias must be sampled for both VGS = +10V, VDS = 0V and VGS = 0V, VDS = 80% BVDSS
7. Gamma data taken 12/18/89 on TA 17655 devices by GE ASTRO SPACE; EMC/SURVIVABILITY LABORATORY; KING OF PRUSSIA,
PA 19401
8. Single event drain burnout testing by Titus, J.L., et al of NWSC, Crane, IN at Brookhaven Nat. Lab. Dec 11-14, 1989
9. Neutron derivation, INTERSIL Application note AN-8831, Oct. 1988
FRF450D, FRF450R, FRF450H
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FRF450R | 制造商:INTERSIL 制造商全稱(chēng):Intersil Corporation 功能描述:9A, 500V, 0.615 Ohm, Rad Hard, N-Channel Power MOSFETs |
| FRF501G | 功能描述:整流器 5.0 Amp 50 Volt 150ns RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| FRF501G C0 | 制造商:SKMI/Taiwan 功能描述:Diode Switching 50V 5A 3-Pin(3+Tab) ITO-220AB Tube |
| FRF501G_1 | 制造商:TSC 制造商全稱(chēng):Taiwan Semiconductor Company, Ltd 功能描述:Isolated 5.0 AMPS. Glass Passivated Fast Recovery Rectifiers |
| FRF502G | 功能描述:整流器 5.0 Amp 100 Volt 150ns RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
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