- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄375890 > FQPF17N08 (FAIRCHILD SEMICONDUCTOR CORP) GIGATRUE 550 CAT6 PATCH 100 FT, NON BOOT, WHITE PDF資料下載
參數(shù)資料
| 型號： | FQPF17N08 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | GIGATRUE 550 CAT6 PATCH 100 FT, NON BOOT, WHITE |
| 中文描述： | 11.2 A, 80 V, 0.115 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | TO-220F, 3 PIN |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 600K |
| 代理商： | FQPF17N08 |
2000 Fairchild Semiconductor International
F
(Note 4)
(Note 4, 5)
(Note 4, 5)
(Note 4)
Rev. A1, January 2001
Electrical Characteristics
T
C
= 25°C unless otherwise noted
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 1.1mH, I
= 11.2A, V
DD
= 25V, R
= 25
,
Starting T
= 25°C
3. I
≤
16.5A, di/dt
≤
300A/
μ
s, V
≤
BV
Starting T
J
= 25°C
4. Pulse Test : Pulse width
≤
300
μ
s, Duty cycle
≤
2%
5. Essentially independent of operating temperature
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage
BV
DSS
/
T
J
Coefficient
I
DSS
Zero Gate Voltage Drain Current
V
GS
= 0 V, I
D
= 250
μ
A
80
--
--
V
Breakdown Voltage Temperature
I
D
= 250
μ
A, Referenced to 25°C
--
0.08
--
V/°C
V
DS
= 80 V, V
GS
= 0 V
V
DS
= 64 V, T
C
= 150°C
V
GS
= 25 V, V
DS
= 0 V
V
GS
= -25 V, V
DS
= 0 V
--
--
--
--
--
--
--
--
1
10
100
-100
μ
A
μ
A
nA
nA
I
GSSF
I
GSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
On Characteristics
V
GS(th)
Gate Threshold Voltage
R
DS(on)
Static Drain-Source
On-Resistance
g
FS
Forward Transconductance
V
DS
= V
GS
, I
D
= 250
μ
A
2.0
--
4.0
V
V
GS
= 10 V, I
D
= 5.6 A
--
0.088
0.115
V
DS
= 30 V, I
D
= 5.6 A
--
5.13
--
S
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
--
--
--
350
120
28
450
155
35
pF
pF
pF
Switching Characteristics
t
d(on)
Turn-On Delay Time
t
r
Turn-On Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Turn-Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate-Source Charge
Q
gd
Gate-Drain Charge
V
DD
= 40 V, I
D
= 16.5 A,
R
G
= 25
--
--
--
--
--
--
--
4.8
60
15
25
12
2.7
5.4
20
130
40
60
15
--
--
ns
ns
ns
ns
nC
nC
nC
V
DS
= 64 V, I
D
= 16.5 A,
V
GS
= 10 V
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current
I
SM
Maximum Pulsed Drain-Source Diode Forward Current
V
SD
Drain-Source Diode Forward Voltage
t
rr
Reverse Recovery Time
Q
rr
Reverse Recovery Charge
--
--
--
--
--
--
--
--
55
92
11.2
44.8
1.5
--
--
A
A
V
ns
nC
V
GS
= 0 V, I
S
= 11.2 A
V
GS
= 0 V, I
S
= 16.5 A,
dI
F
/ dt = 100 A/
μ
s
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FQPF17P10 | 100V P-Channel MOSFET |
| FQPF17P06 | GIGATRUE 550 CAT6 PATCH 25 FT, SNAGLESS, GRAY |
| FQPF17N40 | 400V N-Channel MOSFET |
| FQPF19N10L | 100V LOGIC N-Channel MOSFET |
| FQPF19N10 | GIGATRUE CAT6 UNIVERSAL JACK, RED |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FQPF17N08L | 功能描述:MOSFET 80V N-Channel QFET Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FQPF17N40 | 功能描述:MOSFET 400V N-Channel QFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FQPF17N40T | 功能描述:MOSFET 400V N-Ch QFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FQPF17N4O | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| FQPF17P06 | 功能描述:MOSFET 60V P-Channel QFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復。