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參數(shù)資料
| 型號： | FQPF12N20L |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 200V LOGIC N-Channel MOSFET |
| 中文描述： | 8.2 A, 200 V, 0.32 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220 |
| 封裝： | TO-220F, 3 PIN |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 600K |
| 代理商： | FQPF12N20L |
2001 Fairchild Semiconductor Corporation
February 2001
Rev. A1, February 2001
F
FQPF12N20L
200V LOGIC N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switching DC/DC converters,
switch mode power supply, motor control.
Features
8.2A, 200V, R
DS(on)
= 0.28
@V
GS
= 10 V
Low gate charge ( typical 16 nC)
Low Crss ( typical 17 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
Low level gate drive requirement allowing direct
opration from logic drivers
Absolute Maximum Ratings
T
C
= 25°C unless otherwise noted
Thermal Characteristics
Symbol
V
DSS
I
D
Parameter
FQPF12N20L
200
8.2
5.2
32.8
±
20
210
8.2
4.5
5.5
45
0.36
-55 to +150
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
Drain-Source Voltage
Drain Current
- Continuous (T
C
= 25°C)
- Continuous (T
C
= 100°C)
- Pulsed
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
C
= 25°C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
- Derate above 25°C
T
J
, T
STG
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8
"
from case for 5 seconds
T
L
300
°C
Symbol
R
θ
JC
R
θ
JA
Parameter
Typ
--
--
Max
2.78
62.5
Units
°C
/
W
°C
/
W
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
! "
!
!
S
!
"
"
D
G
TO-220F
FQPF Series
G
S
D
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FQPF12N60 | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FQPF12N60C | 功能描述:MOSFET 600V N-Ch Q-FET advance C-Series RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FQPF12N60C | 制造商:Fairchild Semiconductor Corporation 功能描述:N CH MOSFET 600V 12A TO-220F |
| FQPF12N60C_G | 制造商:Fairchild 功能描述:CFET 600V |
| FQPF12N60CT | 功能描述:MOSFET N-CH/600V/12A QFET C-Series RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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