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參數(shù)資料
| 型號： | FQA13N50CF_F109 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 500V N-Channel MOSFET; Package: TT3P0; No of Pins: 3; Container: Rail |
| 中文描述： | 15 A, 500 V, 0.48 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, TO-3PN, 3 PIN |
| 文件頁數(shù)： | 3/8頁 |
| 文件大小： | 776K |
| 代理商： | FQA13N50CF_F109 |
3
www.fairchildsemi.com
FQA13N50CF Rev. A1
F
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
10
-1
10
0
10
1
10
-1
10
0
10
1
V
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
Notes :
1. 250us Pulse Test
2. T
C
= 25
°
C
I
D
,
V
DS
, Drain-Source Voltage [V]
2
4
6
8
10
10
-1
10
0
10
1
150
°
C
25
°
C
-55
°
C
Notes :
1. V
DS
= 40V
2. 250
μ
s Pulse Test
I
D
,
V
GS
, Gate-Source Voltage [V]
0.2
0.4
0.6
0.8
1.0
1.2
1.4
10
-1
10
0
10
1
150
°
C
Notes :
1. V
GS
= 0V
2. 250
μ
s Pulse Test
25
°
C
I
D
,
V
SD
, Source-Drain voltage [V]
0
5
10
15
20
25
30
35
0.5
1.0
1.5
V
GS
= 20V
V
GS
= 10V
Note : T
J
= 25
°
C
R
D
]
D
I
D
, Drain Current [A]
10
-1
10
0
10
1
0
500
1000
1500
2000
2500
3000
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
Notes ;
1. V
GS
= 0 V
2. f = 1 MHz
C
rss
C
oss
C
iss
C
V
DS
, Drain-Source Voltage [V]
0
10
20
30
40
50
0
2
4
6
8
10
12
V
DS
= 250V
V
DS
= 100V
V
DS
= 400V
Note : I
D
= 15A
V
G
,
Q
G
, Total Gate Charge [nC]
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