- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄357845 > FQA13N50C_NL (FAIRCHILD SEMICONDUCTOR CORP) 500V N-Channel Advance Q-FET C-Series PDF資料下載
參數(shù)資料
| 型號(hào)： | FQA13N50C_NL |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 500V N-Channel Advance Q-FET C-Series |
| 中文描述： | 13.5 A, 500 V, 0.48 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, TO-3PN, 3 PIN |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大?。?/td> | 723K |
| 代理商： | FQA13N50C_NL |
Rev. A, October 2004
F
2004 Fairchild Semiconductor Corporation
0.2
0.4
0.6
0.8
1.0
1.2
1.4
10
-1
10
0
10
1
150
℃
Notes :
※
1. V
= 0V
2. 250μs Pulse Test
25
℃
I
D
,
V
SD
, Source-Drain voltage [V]
0
5
10
15
20
25
30
35
0.5
1.0
1.5
V
GS
= 20V
V
GS
= 10V
Note : T
※
J
= 25
℃
R
D
D
I
D
, Drain Current [A]
Typical Characteristics
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
Figure 2. Transfer Characteristics
Figure 1. On-Region Characteristics
10
-1
10
0
10
1
10
-1
10
0
10
1
GS
V
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
Notes :
※
1. 250μs Pulse Test
2. T
C
= 25
℃
I
D
,
V
DS
, Drain-Source Voltage [V]
2
4
6
8
10
10
-1
10
0
10
1
150
o
C
25
o
C
-55
o
C
Notes :
※
1. V
= 40V
2. 250μs Pulse Test
I
D
,
V
GS
, Gate-Source Voltage [V]
10
-1
10
0
10
1
0
500
1000
1500
2000
2500
3000
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
Notes ;
※
1. V
= 0 V
2. f = 1 MHz
C
rss
C
oss
C
iss
C
V
DS
, Drain-Source Voltage [V]
0
10
20
30
40
50
0
2
4
6
8
10
12
V
DS
= 250V
V
DS
= 100V
V
DS
= 400V
Note : I
※
D
= 13.5A
V
G
,
Q
G
, Total Gate Charge [nC]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FQA13N50CF_NL | 500V N-Channel MOSFET |
| FQA13N50CF_F109 | 500V N-Channel MOSFET; Package: TT3P0; No of Pins: 3; Container: Rail |
| FQA24N50F_NL | 500V N-Channel FRFET |
| FR11FP520L4/AA | 5 CONTACT(S), GLASS FILLED DIALLYL PHTHALATE, FEMALE, CIRCULAR CONNECTOR |
| FR11MR520L4/AA | 5 CONTACT(S), GLASS FILLED DIALLYL PHTHALATE, MALE, CIRCULAR CONNECTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FQA13N80 | 功能描述:MOSFET TO-3P N-CH 600V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FQA13N80 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N TO-3P |
| FQA13N80_06 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:800V N-Channel MOSFET |
| FQA13N80_07 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:800V N-Channel MOSFET |
| FQA13N80_F109 | 功能描述:MOSFET TO-3P N-CH 600V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。