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參數(shù)資料
| 型號(hào)： | FPD2250DFN |
| 英文描述： | LOW NOISE, HIGH LINEARITY PACKAGED PHEMTT |
| 中文描述： | 低噪聲，高線(xiàn)性包裝的PHEMTT |
| 文件頁(yè)數(shù)： | 5/5頁(yè) |
| 文件大?。?/td> | 236K |
| 代理商： | FPD2250DFN |
FPD2250DFN
L
OW
N
OISE
,
H
IGH
L
INEARITY
P
ACKAGED
PHEMTT
Phone:
+1 408 850-5790
Fax:
+1 408 850-5766
http://
www.filtronic.co.uk/semis.com
Revised: 11
/14/05
Email:
sales@filcsi.com
Note: The recommended method for measuring I
DSS
, or any particular I
DS
, is to set the Drain-Source
voltage (V
DS
) at 1.3V. This measurement point avoids the onset of spurious self-oscillation which
would normally distort the current measurement (this effect has been filtered from the I-V curves
presented above). Setting the V
DS
> 1.3V will generally cause errors in the current measurements,
even in stabilized circuits.
Recommendation: Traditionally a device’s I
DSS
rating (I
DS
at V
GS
= 0V) was used as a predictor of
RF power, and for MESFETs there is a correlation between I
DSS
and P
1dB
(power at 1dB gain
compression). For pHEMTs it can be shown that there is
no
meaningful statistical correlation
between I
DSS
and P
1dB
; specifically a linear regression analysis shows r
2
< 0.7, and the regression
fails the F-statistic test. I
DSS
is sometimes useful as a guide to circuit tuning, since the S
22
does vary
with the quiescent operating point I
DS
.
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