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參數(shù)資料
| 型號(hào)： | FPD1000AS |
| 英文描述： | 1W PACKAGED POWER PHEMT |
| 中文描述： | 1W的包裝的電源PHEMT器件 |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大?。?/td> | 533K |
| 代理商： | FPD1000AS |
FPD1000AS
1W
P
ACKAGED
P
OWER P
HEMT
Phone:
+1 408 850-5790
Fax:
+1 408 850-5766
http://
www.filtronic.co.uk/semis
Revised:
05/26/05
Email:
sales@filcsi.com
PERFORMANCE (1.8 GHz)
31 dBm Output Power (P
1dB
)
15 dB Power Gain (G
1dB
)
43 dBm Output IP3
-42 dBc WCDMA ACPR at 21 dBm P
CH
10V Operation
50% Power-Added Efficiency
Evaluation Boards Available
Design Data Available on Website
Suitable for applications to 5 GHz
DESCRIPTION AND APPLICATIONS
The
FPD
1000AS is a packaged
depletion mode
AlGaAs/InGaAs pseudomorphic High Electron
Mobility Transistor (pHEMT), optimized for power applications in L-Band. The surface-mount
package has been optimized for low parasitics.
Typical applications include drivers or output stages in PCS/Cellular
base station
transmitter
amplifiers, as well as other power applications in WLL/WLAN amplifiers.
ELECTRICAL SPECIFICATIONS AT 22°C
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
RF SPECIFICATIONS MEASURED AT
f
= 1.8 GHz USING CW SIGNAL
Power at 1dB Gain Compression
Γ
S
and
Γ
L
tuned for Optimum IP3
Power Gain at dB Gain Compression
G
1dB
P
1dB
V
DS
= 10V; I
DS
= 200 mA
30
31
dBm
V
DS
= 10V; I
DS
= 200 mA
Γ
S
and
Γ
L
tuned for Optimum IP3
V
DS
= 10 V; I
DS
= 200mA
P
IN
= 0dBm, 50
system
V
DS
= 10V; I
DS
= 200 mA
Γ
S
and
Γ
L
tuned for Optimum IP3
V
DS
= 10V; I
DS
= 200 mA
P
OUT
= 19 dBm (single-tone level)
13.5
15.0
Maximum Stable Gain
S
21
/S
12
Power-Added Efficiency
at 1dB Gain Compression
3
rd
-Order Intermodulation Distortion
Γ
S
and
Γ
L
tuned for Optimum IP3
MSG
20
dB
PAE
50
%
IM3
-46
dBc
Saturated Drain-Source Current
Maximum Drain-Source Current
I
DSS
I
MAX
G
M
I
GSO
|V
P
|
|V
BDGS
|
|V
BDGD
|
Θ
CC
V
DS
= 1.3 V; V
GS
= 0 V
V
DS
= 1.3 V; V
GS
+1 V
V
DS
= 1.3 V; V
GS
= 0 V
V
GS
= -3 V
V
DS
= 1.3 V; I
DS
= 2.4 mA
I
GS
= 2.4 mA
I
GD
= 2.4 mA
See Note on following page
480
650
1100
800
mA
mA
Transconductance
Gate-Source Leakage Current
720
20
mS
μ
A
V
V
V
°
C/W
50
Pinch-Off Voltage
Gate-Source Breakdown Voltage
Gate-Drain Breakdown Voltage
0.7
6
20
0.9
8
22
1.4
Thermal Resistivity (channel-to-case)
25
SEE PACKAGE OUTLINE FOR
MARKING CODE
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FPD1000V | CAP,SMD,TANT,22UF,20%,6.3V,A |
| FPD1050 | 0.75W POWER PHEMT |
| FPD1500DFN | LOW NOISE, HIGH LINEARITY PACKAGED PHEMTT |
| FPD1500P100 | 1W PACKAGED POWER PHEMT |
| FPD2000AS | 2W PACKAGED POWER PHEMT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FPD1000AS_1 | 制造商:FILTRONIC 制造商全稱(chēng):FILTRONIC 功能描述:1W PACKAGED POWER PHEMT |
| FPD1000AS-EB | 制造商:FILTRONIC 制造商全稱(chēng):FILTRONIC 功能描述:1W PACKAGED POWER PHEMT |
| FPD1000V | 制造商:FILTRONIC 制造商全稱(chēng):FILTRONIC 功能描述:1W POWER PHEMT |
| FPD-101R008-0E | 功能描述:光纖連接器 3.2 Gbps RoHS:否 制造商:Molex 產(chǎn)品:Adapters 類(lèi)型:8 Port with External Shutter 連接器類(lèi)型:Adapter 模式:Multimode 光纖直徑: 顏色:Blue 附件類(lèi)型:LC Adapter |
| FPD-102R008-0E | 制造商:FUJITSU 制造商全稱(chēng):Fujitsu Component Limited. 功能描述:4-Channel Optical Transceiver |
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