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參數(shù)資料
| 型號(hào)： | FP212L100-22 |
| 廠商： | SIEMENS A G |
| 元件分類： | 模擬信號(hào)調(diào)理 |
| 英文描述： | Differential Magnetoresistive Sensor |
| 中文描述： | SPECIALTY ANALOG CIRCUIT, PRDB3 |
| 文件頁(yè)數(shù)： | 2/5頁(yè) |
| 文件大小： | 157K |
| 代理商： | FP212L100-22 |
Data Sheet
2
2000-07-01
FP 212 D 250-22
Absolute Maximum Ratings
Electrical Characteristics (
T
A
= 25
°
C)
Measuring Arrangements
By approaching a soft iron part close to the sensor a change in its resistance is obtained.
The potential divider circuit of the magneto resistor causes a reduction in the
temperature dependence of the output voltage
V
OUT
.
Parameter
Operating temperature
Storage temperature
Power dissipation
1)
Supply voltage
2)
Insulation voltage between
terminals and magnet
Thermal conductivity
(when soldered)
Symbol
T
A
T
stg
P
tot
V
IN
V
I
Limit Values
– 40/ + 140
– 40/ + 150
450
10
> 60
Unit
°
C
°
C
mW
V
V
G
thA
≥
5
mW/K
Nominal supply voltage
Total resistance, (
δ
=
∞
,
I
≤
1 mA)
air gap (
δ
=
∞
)
Center symmetry
3)
(
δ
=
∞
)
Offset voltage
4)
(at
V
IN N
and
δ
=
∞
)
Open circuit output voltage
5)
(at
V
IN N
and
δ
= 0.2 mm)
Cut-off frequency
V
IN N
R
1-3
5
1000
…
1600
V
M
V
0
≤
10
≤
130
%
mV
V
out pp
> 1100
mV
f
c
kHz
1) Corresponding to diagram
P
tot
=
f
(
T
A
)
2) Corresponding to diagram
V
IN
=
f(T
A
)
3)
M
R
1
4) Corresponding to measuring circuit in
Fig. 2
5) Corresponding to measuring circuit in
Fig. 2
and arrangement as shown in
Fig. 1
-------------–
3
2
–
=
×
100% for
R
1-2
>
R
2-3
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