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參數(shù)資料
| 型號： | FP1189 |
| 英文描述： | HFETs |
| 中文描述： | HFETs |
| 文件頁數(shù)： | 9/10頁 |
| 文件大小： | 356K |
| 代理商： | FP1189 |
Specifications and information are subject to change without notice.
WJ Communications, Inc
Phone 1-800-WJ1-4401
FAX: 408-577-6621
e-mail: sales@wj.com
Web site: www.wj.com
June 2003
FP1189
-Watt HFET
Product Information
The Communications Edge
TM
Application Note: Constant-Current Active-Biasing
Special attention should be taken to properly bias the FP1189.
Power supply sequencing is required to prevent the device from
operating at 100% Idss for a prolonged period of time and possibly
causing damage to the device. It is recommended that for the safest
operation, the negative supply be “first on and last off.” With a
negative gate voltage present, the drain voltage can then be applied
to the device. The gate voltage can then be adjusted to have the
device be used at the proper quiescent bias condition.
An optional active-bias current mirror is recommended for use with
the application circuits shown in this datasheet. Generally in a
laboratory environment, the gate voltage is adjusted until the drain
draws the recommended operating current. The gate voltage
required can vary slightly from device to device because of device
pinchoff variation, while also varying slightly over temperature.
The active-bias circuit, shown on the right, uses dual PNP transistors
to provide a constant drain current into the FP1189, while also
eliminating the effects of pinchoff variation. This configuration is
best suited for applications where the intended output power level of
the amplifier is backed off at least 6 dB away from its compression
point. With the implementation of the circuit, lower P1dB values
may be measured for a Class-AB amplifier, where the device will
attempt to source more drain current while the circuit tries to provide
a constant drain current. The circuit should be connected directly in
line with where the voltage supplies would be normally connected
with the amplifier circuit, as shown the diagram. Any required
matching circuitry remains the same, although it is not shown in the
diagram. This recommended active-bias constant-current circuit
adds 7 components to the parts count for implementation, but should
cost only an extra $0.144 to realize ($0.10 for U1, $0.0029 for R1,
R3, R4, R5, $0.024 for R2, and $0.0085 for C1).
Temperature compensation is achieved by tracking the voltage
variation with the temperature of the emitter-to-base junction of the
two PNP transistors. As a 1st order approximation, this is achieved
by using matched transistors with approximately the same Ibe
current. Thus the transistor emitter voltage adjusts the HFET gate
voltage so that the device draws a constant current, regardless of the
temperature. A Rohm dual transistor - UMT1N - is recommended
for cost, minimal board space requirements, and to minimize the
variation between the two transistors. Minimizing the variability
between the base-to-emitter junctions allow more accuracy in setting
the current draw. More details can be found in a separate application
note “Active-bias Constant-current Source Recommended for
HFETs” found on the WJ website.
Parameter
Pos Supply, Vdd
Neg Supply, Vgg
Vds
Ids
R1
R2
R3
R4
R5
FP1189
+8 V
-5 V
+7.75 V
125 mA
62
2.0
1.8 k
1 k
1 k
6
1
5
2
4
3
R1
R2
R3
R4
1 k
-V
gg
+V
dd
U1
Rohm UMT1N
RF IN
RF OUT
DUT
M.N.
M.N.
HFET Application Circuit
R5
C1
.01
μ
F
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|---|---|
| FP1189-G | 功能描述:射頻JFET晶體管 50-4000MHz +27dBm P1dB RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:N-Channel 正向跨導(dǎo) gFS（最大值/最小值）: 電阻汲極/源極 RDS（導(dǎo)通）: 漏源電壓 VDS:40 V 閘/源截止電壓:5 V 閘/源擊穿電壓:40 V 最大漏極/柵極電壓:40 V 漏極電流（Vgs=0 時的 Idss）:25 mA to 75 mA 漏極連續(xù)電流: 功率耗散:250 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-23 封裝:Reel |
| FP1189-PCB1900S | 功能描述:射頻開發(fā)工具 1900MHz Eval Brd 15.5dB Gain RoHS:否 制造商:Taiyo Yuden 產(chǎn)品:Wireless Modules 類型:Wireless Audio 工具用于評估:WYSAAVDX7 頻率: 工作電源電壓:3.4 V to 5.5 V |
| FP1189-PCB2140S | 功能描述:射頻開發(fā)工具 2140MHz Eval Brd 14.5dB Gain RoHS:否 制造商:Taiyo Yuden 產(chǎn)品:Wireless Modules 類型:Wireless Audio 工具用于評估:WYSAAVDX7 頻率: 工作電源電壓:3.4 V to 5.5 V |
| FP1189-PCB900S | 功能描述:射頻開發(fā)工具 900MHz Eval Brd 20.5dB Gain RoHS:否 制造商:Taiyo Yuden 產(chǎn)品:Wireless Modules 類型:Wireless Audio 工具用于評估:WYSAAVDX7 頻率: 工作電源電壓:3.4 V to 5.5 V |
| FP1189-RFID | 制造商:WJCI 制造商全稱:WJCI 功能描述:1/2 - Watt HFET |
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