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參數(shù)資料
| 型號： | FLX207MH-12 |
| 廠商： | SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC. |
| 英文描述： | X, Ku Band Power GaAs FET |
| 中文描述： | 十，Ku波段砷化鎵場效應(yīng)管 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 88K |
| 代理商： | FLX207MH-12 |
1
Edition 1.1
August 1999
FLX207MH-12
X, Ku Band Power GaAs FET
Item
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
Symbol
VDS
VGS
15
-5
12.5
-65 to +175
175
Tc = 25
°
C
V
V
W
°
C
°
C
PT
Tstg
Tch
Condition
Unit
Rating
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25
°
C)
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 17.8 and -1.0 mA respectively with
gate resistance of 250
.
3.The operating channel temperature (Tch) should not exceed 145
°
C.
Item
Saturated Drain Current
Transconductance
Pinch-off Voltage
Gate Source Breakdown Voltage
Power-added Efficiency
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
Symbol
IDSS
gm
-
800
1200
-
400
-
-1.0
-2.0
-3.5
-5
-
-
6.0
7.0
-
-
28
-
31.5
32.5
-
VDS = 5V, IDS = 40mA
VDS = 5V, IDS = 500mA
VDS = 5V, VGS = 0V
IGS = -40
μ
A
VDS = 10V,
IDS
=
0.6 IDSS (Typ.),
f = 12.5 GHz
mA
mS
V
dB
%
dBm
V
Vp
VGSO
P1dB
G1dB
η
add
Test Conditions
Unit
Limit
Typ.
Max.
Min.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25
°
C)
Channel to Case
Thermal Resistance
-
10
12
°
C/W
Rth
G.C.P.: Gain Compression Point
CASE STYLE:
MH
DESCRIPTION
The FLX207MH-12 is a power GaAs FET that is designed for general
purpose applications in the X-Band frequency range as it provides
superior power, gain, and efficiency.
Fujitsu’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
FEATURES
High Output Power: P1dB= 32.5dBm(Typ.)
High Gain: G1dB= 7.0dB(Typ.)
High PAE:
η
add= 28%(Typ.)
Proven Reliability
Hermetic Metal/Ceramic Package
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