參數(shù)資料
型號: FJX3904
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 小信號晶體管
英文描述: General Purpose Transistor
中文描述: 200 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封裝: SOT-323, 3 PIN
文件頁數(shù): 1/4頁
文件大?。?/td> 41K
代理商: FJX3904
2002 Fairchild Semiconductor Corporation
Rev. A2, August 2002
F
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25
°
C unless otherwise noted
Electrical Characteristics
T
a
=25
°
C
unless otherwise noted
* Pulse Test: Pulse Width
300
μ
s, Duty Cycle
2%
Symbol
Parameter
Value
60
40
6
200
350
-55 ~ 150
Units
V
V
V
mA
mW
°
C
V
CBO
V
CES
V
EBO
I
C
P
C
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Storage Temperature
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CEX
h
FE
Parameter
Test Condition
Min.
60
40
6
Max.
Units
V
V
V
nA
Collector-Base Breakdown Voltage
* Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
* DC Current Gain
I
C
=10
μ
A, I
E
=0
I
C
=1mA, I
B
=0
I
E
=10
μ
A, I
C
=0
V
CE
=30V, V
EB
=3V
V
CE
=1V, I
C
=0.1mA
V
CE
=1V, I
C
=1mA
V
CE
=1V, I
C
=10mA
V
CE
=1V, I
C
=50mA
V
CE
=1V, I
C
=100mA
I
C
=10mA, I
B
=1mA
I
C
=50mA, I
B
=5mA
I
C
=10mA, I
B
=1mA
I
C
=50mA, I
B
=5mA
V
CB
=5V, I
E
=0, f=1MHz
V
CE
=20V, I
C
=10mA
I
C
=100
μ
A, V
CE
=5V, R
S
=1K
f=10Hz to 15.7KHz
V
CC
=3V, V
BE
=0.5V
I
C
=10mA, I
B1
=1mA
V
CC
=3V, I
C
=10mA
I
B1
=I
B2
=1mA
50
40
70
100
60
30
300
V
CE
(sat)
* Collector-Emitter Saturation Voltage
0.2
0.3
0.85
0.95
4
V
V
V
V
pF
MHz
dB
V
BE
(sat)
* Base-Emitter Saturation Voltage
0.65
C
ob
f
T
NF
Output Capacitance
Current Gain Bandwidth Product
Noise Figure
300
5
t
ON
Turn On Time
70
ns
t
OFF
Turn Off Time
250
ns
FJX3904
General Purpose Transistor
S1A
Marking
1. Base 2. Emitter 3. Collector
1
2
SOT-323
3
相關(guān)PDF資料
PDF描述
FJX3906 General Purpose Transistor
FJX4001R PNP Epitaxial Silicon Transistor For Switching Application(開關(guān)型的PNP硅外延晶體管)
FJX4002R Switching Application
FJX4003R Switching Application
FJX4004R PNP Epitaxial Silicon Transistor For Switching Application(開關(guān)型的PNP硅外延晶體管)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FJX3904_07 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:NPN Epitaxial Silicon Transistor
FJX3904TF 功能描述:兩極晶體管 - BJT NPN/60V/0.2A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
FJX3906 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:General Purpose Transistor
FJX3906TF 功能描述:兩極晶體管 - BJT PNP/40V/0.2A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
FJX3906TF_Q 功能描述:兩極晶體管 - BJT PNP/40V/0.2A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2