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參數(shù)資料
| 型號： | FJX2907 |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | General Purpose Transistor |
| 中文描述： | 通用晶體管 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 40K |
| 代理商： | FJX2907 |
2002 Fairchild Semiconductor Corporation
Rev. B1, August 2002
F
1. Base 2. Emitter 3. Collector
1
2
SOT-323
3
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25
°
C
unless otherwise noted
Electrical Characteristics
T
a
=25
°
C
unless otherwise noted
* Pulse Test: PW
≤
300
μ
s, Duty Cycle
≤
2%
Symbol
Parameter
Value
-60
-60
-5
-600
325
150
Units
V
V
V
mA
mW
°
C
V
CBO
V
CES
V
EBO
I
C
P
C
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Storage Temperature
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
h
FE
Parameter
Test Condition
Min.
-60
-60
-5
Max.
Units
V
V
V
μ
A
Collector-Base Breakdown Voltage
* Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
DC Current Gain
I
C
= -10
μ
A, I
E
=0
I
C
= -10mA, I
B
=0
I
E
= -10
μ
A, I
C
=0
V
CB
= -50V, I
E
=0
V
CE
= -10V, I
E
= -0.1mA
V
CE
= -10V, I
C
= -1.0mA
V
CE
= -10V, I
C
= -10mA
*V
CE
= -10V, IC= -150mA
*V
CE
= -10V, I
C
= -500mA
I
C
= -150mA, I
B
= -15mA
I
C
= -500mA, I
B
= -50mA
I
C
= -150mA, I
B
= -15mA
I
C
= -500mA, I
B
= -50mA
I
C
= -50mA, V
CE
= -20V,
f=100MHz
V
CB
= -10V, I
E
=0
f=1.0MHz
V
CC
= -30V, I
C
= -150mA
I
B1
= -15mA
V
CC
= -6V, I
C
= -150mA
I
B1
=I
B2
=15mA
-0.01
75
100
100
100
50
300
V
CE
(sat)
* Collector-Emitter Saturation Voltage
-0.4
-1.6
-1.3
-2.6
V
V
V
V
V
BE
(sat)
* Base-Emitter Saturation Voltage
f
T
Current Gain Bandwidth Product
200
MHz
C
ob
Output Capacitance
8
pF
t
ON
Turn On Time
45
ns
t
OFF
Turn Off Time
100
ns
FJX2907A
General Purpose Transistor
S2F
Marking
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| FJX3001R | Switching Application |
| FJX3002R | Switching Application |
| FJX3003R | Switching Application |
| FJX3004R | Switching Application |
| FJX3005R | Switching Application |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FJX2907A | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:General Purpose Transistor |
| FJX2907ATF | 功能描述:兩極晶體管 - BJT PNP Epitaxial Transistor RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| FJX2907ATF_Q | 功能描述:兩極晶體管 - BJT PNP Epitaxial Transistor RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| FJX3001R | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Switching Application |
| FJX3001RTF | 功能描述:開關(guān)晶體管 - 偏壓電阻器 NPN Si Transistor Epitaxial RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
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