參數(shù)資料
型號： FGP20N6S2D
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： IGBT 晶體管
英文描述： Switch Mode Power Supply; Output Power:300W; No. of Outputs:1; Output 1 VDC +:5VDC; Output Current 1:60A; Power Supply Mounting:Chassis; Output Current:60A; Output Power Max:300W; Output Voltage:5VDC; Series:JWS RoHS Compliant: Yes
中文描述： 28 A, 600 V, N-CHANNEL IGBT, TO-220AB
封裝： TO-220AB, 3 PIN
文件頁數(shù)： 2/9頁
文件大?。?/td> 232K
代理商： FGP20N6S2D
2002 Fairchild Semiconductor Corporation
FGH20N6S2D / FGP20N6S2D / FGB20N6S2D Rev. A1
F
Package Marking and Ordering Information
Electrical Characteristics
T
J
= 25
°
C unless otherwise noted
Off State Characteristics
BV
CES
Collector to Emitter Breakdown Voltage
I
CES
Collector to Emitter Leakage Current
On State Characteristics
V
CE(SAT)
Collector to Emitter Saturation Voltage
Dynamic Characteristics
Q
G(ON)
Gate Charge
Switching Characteristics
SSOA
Switching SOA
Thermal Characteristics
R
θ
JC
Thermal Resistance Junction-Case
Device Marking
20N6S2D
20N6S2D
20N6S2D
20N6S2D
Device
Package
TO-247
TO-220AB
TO-263AB
TO-263AB
Tape Width
N/A
N/A
N/A
24mm
Quantity
30
50
50
800 units
FGH20N6S2D
FGP20N6S2D
FGB20N6S2D
FGB20N6S2DT
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
I
C
= 250
μ
A, V
GE
= 0
V
CE
= 600V
600
-
-
-
-
-
-
-
-
V
μ
A
mA
nA
T
J
= 25
°
C
T
J
= 125
°
C
250
2.0
±250
I
GES
Gate to Emitter Leakage Current
V
GE
= ± 20V
I
C
= 7.0A,
V
GE
= 15V
I
EC
= 7.0A
T
J
= 25
°
C
T
J
= 125
°
C
-
-
-
2.2
1.9
1.9
2.7
2.2
2.7
V
V
V
V
EC
Diode Forward Voltage
I
C
= 7.0A,
V
CE
= 300V
I
C
= 250
μ
A, V
CE
= 600V
I
C
= 7.0A, V
CE
= 300V
V
GE
= 15V
V
GE
= 20V
-
-
30
38
4.3
6.5
36
45
5.0
8.0
nC
nC
V
V
V
GE(TH)
V
GEP
Gate to Emitter Threshold Voltage
Gate to Emitter Plateau Voltage
3.5
-
T
J
= 150
°
C, R
G
= 25
,
V
GE
=
15V, L = 0.5mH V
CE
= 600V
IGBT and Diode at T
J
= 25
°
C,
I
CE
= 7A,
V
CE
= 390V,
V
GE
= 15V,
R
G
= 25
L = 0.5mH
Test Circuit - Figure 26
35
-
-
A
t
d(ON)I
t
rI
t
d(OFF)I
t
fI
E
ON1
E
ON2
E
OFF
t
d(ON)I
t
rI
t
d(OFF)I
t
fI
E
ON1
E
ON2
E
OFF
t
rr
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 1)
Turn-On Energy (Note 1)
Turn-Off Energy (Note 2)
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 1)
Turn-On Energy (Note 1)
Turn-Off Energy (Note 2)
Diode Reverse Recovery Time
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
7.7
4.5
87
50
25
85
58
7
4.5
120
85
20
125
135
26
20
-
-
-
-
-
-
ns
ns
ns
ns
μ
J
μ
J
μ
J
ns
ns
ns
ns
μ
J
μ
J
μ
J
ns
ns
75
-
-
145
105
-
140
180
31
24
IGBT and Diode at T
J
= 125
°
C
I
CE
= 7A,
V
CE
= 390V,
V
GE
= 15V,
R
G
= 25
L = 0.5mH
Test Circuit - Figure 26
I
EC
= 7A, dI
EC
/dt = 200A/
μ
s
I
EC
= 1A, dI
EC
/dt = 200A/
μ
s
IGBT
Diode
-
-
1.0
2.2
°
C/W
°
C/W
NOTE:
Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E
is the turn-on loss
of the IGBT only. E
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same T
J
as the IGBT. The diode type is specified in figure 26.
Turn-Off Energy Loss (E
) is defined as the integral of the instantaneous power loss starting at the trailing edge of
the input pulse and ending at the point where the collector current equals zero (I
= 0A). All devices were tested per
JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produc-
es the true total Turn-Off Energy Loss.
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