參數(shù)資料
型號： FGH20N6S2D
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： IGBT 晶體管
英文描述： 600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode
中文描述： 28 A, 600 V, N-CHANNEL IGBT, TO-247
封裝： TO-247, 3 PIN
文件頁數(shù)： 4/9頁
文件大?。?/td> 232K
代理商： FGH20N6S2D
2002 Fairchild Semiconductor Corporation
FGH20N6S2D / FGP20N6S2D / FGB20N6S2D Rev. A1
F
Figure 7. Turn-On Energy Loss vs Collector to
Emitter Current
Figure 8. Turn-Off Energy Loss vs Collector to
Emitter Current
Figure 9. Turn-On Delay Time vs Collector to
Emitter Current
Figure 10. Turn-On Rise Time vs Collector to
Emitter Current
Figure 11. Turn-Off Delay Time vs Collector to
Emitter Current
Figure 12. Fall Time vs Collector to Emitter
Current
Typical Performance Curves
(Continued)
E
O
,
μ
J
150
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
100
200
0
400
2
4
6
8
10
14
0
300
250
350
50
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
= 10V
12
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
= 15V
R
G
= 25
, L = 500
μ
H, V
CE
= 390V
E
O
μ
J
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
T
J
= 125
o
C, V
GE
= 10V, V
GE
= 15V
T
J
= 25
o
C, V
GE
= 10V, V
GE
= 15V
2
4
6
8
10
14
0
12
150
100
200
0
350
300
250
50
R
G
= 25
, L = 500
μ
H, V
CE
= 390V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
d
,
6
7
8
9
10
2
4
6
8
10
14
0
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
= 15V
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
= 10V
11
12
13
12
R
G
= 25
, L = 500
μ
H, V
CE
= 390V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
r
,
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
= 10V
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
=15V
2
4
6
8
10
14
0
12
0
5
10
15
20
25
30
35
R
G
= 25
, L = 500
μ
H, V
CE
= 390V
80
60
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
d
,
140
120
100
V
GE
= 10V, V
GE
= 15V, T
J
= 25
o
C
V
GE
= 10V, V
GE
= 15V, T
J
= 125
o
C
2
4
6
8
10
14
0
12
R
G
= 25
, L = 500
μ
H, V
CE
= 390V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
f
,
T
J
= 25
o
C, V
GE
= 10V or 15V
T
J
= 125
o
C, V
GE
= 10V or 15V
2
4
6
8
10
14
0
12
60
40
120
100
80
R
G
= 25
, L = 500
μ
H, V
CE
= 390V
相關(guān)PDF資料
PDF描述
FGB20N6S2D 600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode
FGP20N6S2D Switch Mode Power Supply; Output Power:300W; No. of Outputs:1; Output 1 VDC +:5VDC; Output Current 1:60A; Power Supply Mounting:Chassis; Output Current:60A; Output Power Max:300W; Output Voltage:5VDC; Series:JWS RoHS Compliant: Yes
FGB20N6S2DT 600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode
FGH20N6S2 Switch Mode Power Supply; Output Power:120W; No. of Outputs:1; Output 1 VDC +:48VDC; Output Current 1:2.5A; Power Supply Mounting:Chassis; Output Current:2.5A; Output Power Max:120W; Output Voltage:48VDC; Series:JWS RoHS Compliant: Yes
FGP20N6S2 600V, SMPS II Series N-Channel IGBT
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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FGH25T120SMD_F155 制造商:Fairchild Semiconductor Corporation 功能描述:1200V 25A FS2 TRENCH IGBT - Rail/Tube 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT 1200V 25A FS2 TO-247-3 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT 1200V 50A 428W TO247-3 制造商:Fairchild Semiconductor Corporation 功能描述:RAIL / 1200V 25A FS2 Trench IGBT
FGH30N120FTD 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Field stop trench technology
FGH30N120FTDTU 功能描述:IGBT 晶體管 N-CH/1200V 30A FS Trench RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
FGH30N60LSD 功能描述:IGBT 晶體管 1.1V 30A High Speed RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
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