參數(shù)資料
型號(hào)： FGB20N6S2D
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： IGBT 晶體管
英文描述： 600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode
中文描述： 28 A, 600 V, N-CHANNEL IGBT, TO-263AB
封裝： TO-263AB, 3 PIN
文件頁(yè)數(shù)： 2/9頁(yè)
文件大小： 232K
代理商： FGB20N6S2D
2002 Fairchild Semiconductor Corporation
FGH20N6S2D / FGP20N6S2D / FGB20N6S2D Rev. A1
F
Package Marking and Ordering Information
Electrical Characteristics
T
J
= 25
°
C unless otherwise noted
Off State Characteristics
BV
CES
Collector to Emitter Breakdown Voltage
I
CES
Collector to Emitter Leakage Current
On State Characteristics
V
CE(SAT)
Collector to Emitter Saturation Voltage
Dynamic Characteristics
Q
G(ON)
Gate Charge
Switching Characteristics
SSOA
Switching SOA
Thermal Characteristics
R
θ
JC
Thermal Resistance Junction-Case
Device Marking
20N6S2D
20N6S2D
20N6S2D
20N6S2D
Device
Package
TO-247
TO-220AB
TO-263AB
TO-263AB
Tape Width
N/A
N/A
N/A
24mm
Quantity
30
50
50
800 units
FGH20N6S2D
FGP20N6S2D
FGB20N6S2D
FGB20N6S2DT
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
I
C
= 250
μ
A, V
GE
= 0
V
CE
= 600V
600
-
-
-
-
-
-
-
-
V
μ
A
mA
nA
T
J
= 25
°
C
T
J
= 125
°
C
250
2.0
±250
I
GES
Gate to Emitter Leakage Current
V
GE
= ± 20V
I
C
= 7.0A,
V
GE
= 15V
I
EC
= 7.0A
T
J
= 25
°
C
T
J
= 125
°
C
-
-
-
2.2
1.9
1.9
2.7
2.2
2.7
V
V
V
V
EC
Diode Forward Voltage
I
C
= 7.0A,
V
CE
= 300V
I
C
= 250
μ
A, V
CE
= 600V
I
C
= 7.0A, V
CE
= 300V
V
GE
= 15V
V
GE
= 20V
-
-
30
38
4.3
6.5
36
45
5.0
8.0
nC
nC
V
V
V
GE(TH)
V
GEP
Gate to Emitter Threshold Voltage
Gate to Emitter Plateau Voltage
3.5
-
T
J
= 150
°
C, R
G
= 25
,
V
GE
=
15V, L = 0.5mH V
CE
= 600V
IGBT and Diode at T
J
= 25
°
C,
I
CE
= 7A,
V
CE
= 390V,
V
GE
= 15V,
R
G
= 25
L = 0.5mH
Test Circuit - Figure 26
35
-
-
A
t
d(ON)I
t
rI
t
d(OFF)I
t
fI
E
ON1
E
ON2
E
OFF
t
d(ON)I
t
rI
t
d(OFF)I
t
fI
E
ON1
E
ON2
E
OFF
t
rr
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 1)
Turn-On Energy (Note 1)
Turn-Off Energy (Note 2)
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 1)
Turn-On Energy (Note 1)
Turn-Off Energy (Note 2)
Diode Reverse Recovery Time
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
7.7
4.5
87
50
25
85
58
7
4.5
120
85
20
125
135
26
20
-
-
-
-
-
-
ns
ns
ns
ns
μ
J
μ
J
μ
J
ns
ns
ns
ns
μ
J
μ
J
μ
J
ns
ns
75
-
-
145
105
-
140
180
31
24
IGBT and Diode at T
J
= 125
°
C
I
CE
= 7A,
V
CE
= 390V,
V
GE
= 15V,
R
G
= 25
L = 0.5mH
Test Circuit - Figure 26
I
EC
= 7A, dI
EC
/dt = 200A/
μ
s
I
EC
= 1A, dI
EC
/dt = 200A/
μ
s
IGBT
Diode
-
-
1.0
2.2
°
C/W
°
C/W
NOTE:
Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E
is the turn-on loss
of the IGBT only. E
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same T
J
as the IGBT. The diode type is specified in figure 26.
Turn-Off Energy Loss (E
) is defined as the integral of the instantaneous power loss starting at the trailing edge of
the input pulse and ending at the point where the collector current equals zero (I
= 0A). All devices were tested per
JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produc-
es the true total Turn-Off Energy Loss.
相關(guān)PDF資料
PDF描述
FGP20N6S2D Switch Mode Power Supply; Output Power:300W; No. of Outputs:1; Output 1 VDC +:5VDC; Output Current 1:60A; Power Supply Mounting:Chassis; Output Current:60A; Output Power Max:300W; Output Voltage:5VDC; Series:JWS RoHS Compliant: Yes
FGB20N6S2DT 600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode
FGH20N6S2 Switch Mode Power Supply; Output Power:120W; No. of Outputs:1; Output 1 VDC +:48VDC; Output Current 1:2.5A; Power Supply Mounting:Chassis; Output Current:2.5A; Output Power Max:120W; Output Voltage:48VDC; Series:JWS RoHS Compliant: Yes
FGP20N6S2 600V, SMPS II Series N-Channel IGBT
FGB20N6S2 600V, SMPS II Series N-Channel IGBT
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FGB20N6S2DT 功能描述:IGBT 晶體管 600V N-Ch IGBT SMPS II Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
FGB20N6S2T 功能描述:IGBT 晶體管 600V N-Channel IGBT SMPS II Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
FGB3040CS 功能描述:馬達(dá)/運(yùn)動(dòng)/點(diǎn)火控制器和驅(qū)動(dòng)器 IGBT EcoSPARK 300mJ 400V NCh Cur Sen Ign RoHS:否 制造商:STMicroelectronics 產(chǎn)品:Stepper Motor Controllers / Drivers 類型:2 Phase Stepper Motor Driver 工作電源電壓:8 V to 45 V 電源電流:0.5 mA 工作溫度:- 25 C to + 125 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:HTSSOP-28 封裝:Tube
FGB3040CS_12 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:EcoSPARKTM 300mJ, 400V, N-Channel Current Sensing Ignition IGBT
FGB30N6S2 功能描述:IGBT 晶體管 Sgl 600V Ch RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*