參數(shù)資料
型號: FGA25N120AND
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: IGBT 晶體管
英文描述: IGBT
中文描述: 40 A, 1200 V, N-CHANNEL IGBT
封裝: TO-3P, 3 PIN
文件頁數(shù): 7/9頁
文件大?。?/td> 867K
代理商: FGA25N120AND
7
www.fairchildsemi.com
FGA25N120ANTD Rev. B
F
Typical Performance Characteristics
(Continued)
Figure 18. Forward Characteristics
Figure 19. Reverse Recovery Current
Figure 20. Stored Charge
Figure 21. Reverse Recovery Time
0.1
1
10
50
0.0
0.4
0.8
1.2
1.6
2.0
T
C
= 125
°
C
T
C
= 25
°
C
T
J
= 25
°
C
T
J
= 125
°
C
Forward Voltage , V
F
[V]
F
F
5
10
15
20
25
0
5
10
15
20
25
30
di/dt = 100A/
μ
s
di/dt = 200A/
μ
s
R
r
Forward Current , I
F
[A]
5
10
15
20
25
0
100
200
300
di/dt = 100A/
μ
s
di/dt = 200A/
μ
s
R
r
Forward Current , I
F
[A]
5
10
15
20
25
0
1000
2000
3000
4000
di/dt = 100A/
μ
s
di/dt = 200A/
μ
s
S
r
Forward Current , I
F
[A]
相關PDF資料
PDF描述
FGA25N12ANTD 1200V NPT Trench IGBT
FGA50N60LS IGBT
FGAF40N60UFD Ultrafast IGBT
FGC4000BX-90DS HIGH POWER INVERTER USE PRESS PACK TYPE
FGD3N60LSD IGBT
相關代理商/技術參數(shù)
參數(shù)描述
FGA25N120ANDTU 功能描述:IGBT 晶體管 Copak Discrete RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
FGA25N120ANTD 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT TO-3P TUBE 30 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT NPT 1200V 50A TO-3PN 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT, NPT, 1200V, 50A, TO-3PN 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT, NPT, 1200V, 50A, TO-3PN, Transistor Type:IGBT, DC Collector Current:50A, C 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT,NPT,TO-3PN, Transistor Type:IGBT, DC Collector Current:50A, Collector Emitter Voltage Vces:2.5V, Power Dissipation Pd:312W, Collector Emitter Voltage V(br)ceo:1.2kV, Operating Temperature Range:-55C to +150C, Transistor Case , RoHS Compliant: Yes
FGA25N120ANTD_07 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:1200V NPT Trench IGBT
FGA25N120ANTD_F109 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:1200V NPT Trench IGBT
FGA25N120ANTDTU 功能描述:IGBT 晶體管 Copak Discrete RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube