
2000 Fairchild Semiconductor International
F
Rev. F, September 2000
ULTRA FAST RECOVERY POWER RECTIFIER
Absolute Maximum Ratings
(per diode) T
C
=25
°
C unless otherwise noted
Thermal Characteristics
Electrical Characteristics
(per diode) T
C
=25
°
C unless otherwise noted
* Pulse Test: Pulse Width=300
μ
s, Duty Cycle
=
2%
Symbol
V
RRM
I
F(AV)
I
FSM
Parameter
Value
400
15
150
Units
V
A
A
Peak Repetitive Reverse Voltage
Average Rectified Forward Current @ T
C
= 100
°
C
Non-repetitive Peak Surge Current
60Hz Single Half-Sine Wave
Operating Junction and Storage Temperature
T
J,
T
STG
- 65 to +150
°
C
Symbol
R
θ
JC
Parameter
Value
3.0
Units
°
C/W
Maximum Thermal Resistance, Junction to Case
Symbol
V
FM
*
Parameter
Min.
Typ.
Max.
Units
V
Maximum Instantaneous Forward Voltage
I
F
= 15A
I
F
= 15A
Maximum Instantaneous Reverse Current
@ rated V
R
T
C
= 25
°
C
T
C
= 100
°
C
-
-
-
-
1.4
1.3
I
RM
*
T
C
= 25
°
C
T
C
= 100
°
C
-
-
-
-
-
-
-
-
-
-
40
400
50
5.0
125
μ
A
t
rr
I
rr
Q
rr
Maximum Reverse Recovery Time
Maximum Reverse Recovery Current
Maximum Reverse Recovery Charge
(I
F
=15A, di/dt = 200A/
μ
s)
Avalanche Energy
ns
A
nC
W
AVL
1.0
-
-
mJ
FFA15U40DN
Features
Ultrafast with soft recovery
Low forward voltage
Applications
Power switching circuits
Output rectifiers
Freewheeling diodes
Switching mode power supply
TO-3P
1 2 3
1. Anode 2.Cathode 3. Anode