參數(shù)資料
型號(hào)： FE61-0001
英文描述： GaAs Foundry Services PROCESS LH5
中文描述： 砷化鎵晶圓代工服務(wù)過(guò)程LH5
文件頁(yè)數(shù)： 2/2頁(yè)
文件大?。?/td> 38K
代理商： FE61-0001
GaAs Foundry Services
Process LH5
V1.00
Specifications Subject to Change Without Notice.
2
North America: Tel. (800) 366-2266
Asia/Pacific: Tel. +81 3 3263-8761
Europe:
Fax (800) 618-8883 Fax +81 3 3263-8769
M/A-COM Inc.
Tel. +44 (1344) 869-595
Fax +44 (1344) 300-020
Normalized Nominal Models
Parameter
30% I
D,MAX
3 V
DS
50% I
DMAX
3 V
DS
I
DS
mA/mm
100.0
185.0
g
m
mS/mm
470
560.0
C
gs
pF/mm
0.807
0.861
C
gd
pF/mm
0.137
0.145
C
ds
pF/mm
0.234
0.266
T
d
pS
0.29
0.80
R
i
Ohms-mm
0.788
0.928
G
ds
mS/mm
37.25
37.8
G
gs
mS/mm
0.0
0.0
R
g
Ohms/mm
140
140
R
s
Ohms-mm
0.32
0.34
R
d
Ohms-mm
0.38
0.374
L
g
nH/Finger
L
d
nH/Finger
C
gp
pF/mm
0.050
0.050
C
dp
pF/mm
0.003
0.003
FREQUENCY RESPONSE
200
μ
m Low Noise P-HEMT
Vds = 3V, Ids = 30 mA, Vg= +0.2 V
Mask Layer Assignments
Mask #
10
20
30
40
EB 50
EB 60
70
80
90
100
110
120
130
NOTE: Unused layer numbers are reserved for future use.
Function
Ohmic
Active area
TaN resistor
Base plate
Gate recess
Gate metal
Dielectric via
Air bridge
Plating
Front streets
RIE via
Back streets
Barrier
MINIMUM NOISE FIGURE
(25
μ
m x 6) 150
μ
m Low Noise P-HEMT
Vds = 3V, Ids = 15 mA
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
5
10
20
25
30
Freq
Polynomial Fit degree=2
Fmin = 0.22372 + 0.00262 Freq + 0.00084 Freq^2
15
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