參數(shù)資料
型號(hào)： FDW256P
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 小信號(hào)晶體管
英文描述： 30V P-Channel PowerTrench MOSFET
中文描述： 8000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, MO-153AA
封裝： TSSOP-8
文件頁(yè)數(shù)： 2/5頁(yè)
文件大?。?/td> 67K
代理商： FDW256P
FDW256P Rev C(W)
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Test Conditions
Symbol
Parameter
Min Typ Max Units
Off Characteristics
BV
DSS
Drain–Source Breakdown Voltage V
GS
= 0 V, I
D
= –250
μ
A
BV
DSS
T
J
Coefficient
I
DSS
Zero Gate Voltage Drain Current
I
GSSF
Gate–Body Leakage, Forward
I
GSSR
Gate–Body Leakage, Reverse
–30
V
Breakdown Voltage Temperature
I
D
= –250
μ
A, Referenced to 25
°
C
–23
mV/
°
C
V
DS
= –24 V, V
GS
= 0 V
V
GS
= 25 V,
V
GS
= –25 V, V
DS
= 0 V
–1
100
–100
μ
A
nA
nA
V
DS
= 0 V
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
GS(th)
T
J
Temperature Coefficient
R
DS(on)
Static Drain–Source
On–Resistance
(Note 2)
V
DS
= V
GS
,
I
D
= –250
μ
A, Referenced to 25
°
C
V
GS
= –10 V, I
D
= –8.0 A
V
GS
= –4.5 V, I
D
= –6.5 A
V
GS
=–10 V, I
D
=–8.0A, T
J
=125
°
C
V
GS
= –10 V, V
DS
= –5 V
V
DS
= –5 V,
I
D
= –8.0 A
I
D
= –250
μ
A
–1
–1.7
–3
V
Gate Threshold Voltage
5
mV/
°
C
11
16
15
13.5
20
19
m
I
D(on)
g
FS
On–State Drain Current
Forward Transconductance
–50
A
S
30
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
2267
599
315
pF
pF
pF
V
DS
= –15 V, V
GS
= 0 V,
f = 1.0 MHz
Switching Characteristics
t
d(on)
Turn–On Delay Time
t
r
Turn–On Rise Time
t
d(off)
Turn–Off Delay Time
t
f
Turn–Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate–Source Charge
Q
gd
Gate–Drain Charge
(Note 2)
15
11
78
45
28
7
12
27
35
125
72
38
ns
ns
ns
ns
nC
nC
nC
V
DD
= –15 V, I
D
= –1 A,
V
GS
= –10 V, R
GEN
= 6
V
DS
= –15 V, I
D
= –8.0 A,
V
GS
= –5.0V
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
–1.2
A
V
SD
V
GS
= 0 V, I
S
= –1.2 A
(Note 2)
–0.7
–1.2
V
Notes:
1.
R
θ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θ
JC
is guaranteed by design while R
θ
CA
is determined by the user's board design.
a) R
θ
JA
is 96
°
C/W (steady state) when mounted on a 1 inch2 copper pad on FR-4.
b) R
θ
JA
is 208
°
C/W (steady state) when mounted on a minimum copper pad on FR-4.
2. Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%
F
相關(guān)PDF資料
PDF描述
FDW258P P-Channel 1.8V Specified PowerTrench MOSFET
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDW256P_08 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:30V P-Channel PowerTrench MOSFET
FDW258P 功能描述:MOSFET 12V/8V PCh MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDW258P_08 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:P-Channel 1.8V Specified PowerTrench MOSFET
FDW258P_Q 功能描述:MOSFET 12V/8V PCh MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDW2601NZ 功能描述:MOSFET 2.5V DUAL NCH SPEC- IFIED TRENCH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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