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參數(shù)資料
| 型號： | FDW2503W |
| 英文描述： | TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 20V V(BR)DSS | 5.5A I(D) | SO |
| 中文描述： | 晶體管| MOSFET的|配對| N溝道| 20V的五（巴西）直| 5.5AI（四）|蘇 |
| 文件頁數(shù)： | 4/6頁 |
| 文件大?。?/td> | 154K |
| 代理商： | FDW2503W |
FDW2503N Rev. C (W)
Typical Characteristics
0
1
2
3
4
5
0
2
4
6
8
10
12
Q
g
, GATE CHARGE (nC)
I
D
= 5.5A
V
DS
= 5V
15V
10V
0
300
600
900
1200
1500
0
4
8
12
16
20
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
ISS
C
RSS
C
OSS
f = 1MHz
V
GS
= 0 V
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
0.01
0.1
1
10
100
0.1
1
10
100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
DC
10s
1s
100ms
R
DS(ON)
LIMIT
V
GS
= 4.5V
SINGLE PULSE
R
θ
JA
= 208
T
A
= 25
o
C/W
o
C
10ms
1ms
0
0.001
10
20
30
40
50
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
SINGLE PULSE
R
θ
JA
= 208°C/W
T
A
= 25°C
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
R
θ
JA
(t) = r(t) + R
θ
JA
R
θ
JA
=208 °C/W
T
J
- T
A
= P * R
θ
JA
(t)
Duty Cycle, D = t
1
/ t
2
P(pk)
t
1
t
2
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
F
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