參數(shù)資料
型號(hào): FDV305N
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 小信號(hào)晶體管
英文描述: 30V N-Channel PowerTrench MOSFET
中文描述: 900 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
文件頁(yè)數(shù): 4/5頁(yè)
文件大?。?/td> 172K
代理商: FDV305N
FDV305N Rev D (W)
Typical Characteristics
0
1
2
3
4
5
0
0.5
1
1.5
Q
g
, GATE CHARGE (nC)
V
G
,
I
D
= 0.9A
V
DS
= 5V
10V
15V
0
30
60
90
120
150
0
5
10
15
20
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
C
ISS
C
OSS
C
RSS
f = 1 MHz
V
GS
= 0 V
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
0.01
0.1
1
10
0.1
1
10
100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
,
DC
1s
100ms
100
μ
s
R
DS(ON)
LIMIT
V
GS
= 4.5V
SINGLE PULSE
R
θ
JA
= 357
o
C/W
T
A
= 25
o
C
10ms
1ms
0
0.001
1
2
3
4
5
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
P
SINGLE PULSE
R
θ
JA
= 357°C/W
T
A
= 25°C
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
r
T
R
θ
JA
(t) = r(t) * R
θ
JA
R
θ
JA
= 357
o
C/W
T
J
- T
A
= P * R
θ
JA
(t)
Duty Cycle, D = t
1
/ t
2
P(pk)
t
1
t
2
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 11. Transient Thermal Response Curve.
F
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