參數(shù)資料
型號: FDU8882_NL
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: N-Channel PowerTrench MOSFET
中文描述: 35 A, 30 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
封裝: LEAD FREE, IPAK-3
文件頁數(shù): 6/12頁
文件大小: 277K
代理商: FDU8882_NL
FDD8882/FDU8882 Rev. 1.0.0
www.fairchildsemi.com
F
6
Figure 11. Normalized Gate Threshold Voltage vs
Junction Temperature
Figure 12. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
Figure 13. Capacitance vs Drain to Source
Voltage
Figure 14. Gate Charge Waveforms for Constant
Gate Current
Typical Characteristics
T
C
= 25
°
C unless otherwise noted
0.4
0.6
0.8
1.0
1.2
-80
-40
0
40
80
120
160
200
V
GS
= V
DS
, I
D
= 250
μ
A
N
T
J
, JUNCTION TEMPERATURE (
o
C)
T
0.90
0.95
1.00
1.05
1.10
-80
-40
0
40
80
120
160
200
T
J
, JUNCTION TEMPERATURE (
o
C)
N
I
D
= 250
μ
A
B
100
1000
0.1
1
10
30
3000
C
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 0V, f = 1MHz
C
ISS
=
C
GS
+ C
GD
C
OSS
C
DS
+ C
GD
C
RSS
=
C
GD
0
2
4
6
8
10
0
5
10
15
20
25
V
G
,
Q
g
, GATE CHARGE (nC)
V
DD
= 15V
I
D
= 35A
I
D
= 5A
WAVEFORMS IN
DESCENDING ORDER:
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