參數(shù)資料
型號: FDU8876
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: N-Channel PowerTrench MOSFET
中文描述: 15 A, 30 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
封裝: IPAK-3
文件頁數(shù): 6/11頁
文件大?。?/td> 272K
代理商: FDU8876
2004 Fairchild Semiconductor Corporation
FDD8876 / FDU8876 Rev. A2
F
Test Circuits and Waveforms
Figure 15. Unclamped Energy Test Circuit
Figure 16. Unclamped Energy Waveforms
Figure 17. Gate Charge Test Circuit
Figure 18.
Gate Charge Waveforms
Figure 19. Switching Time Test Circuit
Figure 20. Switching Time Waveforms
t
P
V
GS
0.01
L
I
AS
+
-
V
DS
V
DD
R
G
DUT
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
0V
V
DD
V
DS
BV
DSS
t
P
I
AS
t
AV
0
V
GS
+
-
V
DS
V
DD
DUT
I
g(REF)
L
V
DD
Q
g(TH)
Q
gs
V
GS
= 1V
0
Q
gs2
Q
g(TOT)
V
GS
= 10V
V
DS
V
GS
I
g(REF)
0
Q
gd
Q
g(5)
V
GS
= 5V
V
GS
R
L
R
GS
DUT
+
-
V
DD
V
DS
V
GS
t
ON
t
d(ON)
t
r
90%
10%
V
DS
90%
10%
t
f
t
d(OFF)
t
OFF
90%
50%
50%
10%
PULSE WIDTH
V
GS
0
0
相關(guān)PDF資料
PDF描述
FDD8876 N-Channel PowerTrench MOSFET
FDU8878 N-Channel PowerTrench MOSFET
FDD8878 N-Channel PowerTrench MOSFET
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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FDU8878_08 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel PowerTrench MOSFET 30V, 40A, 15m ohm
FDU8880 功能描述:MOSFET 30V 58A 10 OHM NCH PWR TRENCH MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDU8880_08 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel PowerTrench㈢ MOSFET
FDU8882 功能描述:MOSFET 30V 55A 11 OHM NCH PWR TRENCH MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube