參數(shù)資料
型號: FDU8874
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: N-Channel PowerTrench MOSFET 30V, 116A
中文描述: 35 A, 30 V, 0.0064 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
封裝: IPAK-3
文件頁數(shù): 5/11頁
文件大?。?/td> 133K
代理商: FDU8874
2004 Fairchild Semiconductor Corporation
FDD8874 / FDU8874 Rev.B
F
Figure 11. Normalized Gate Threshold Voltage vs
Junction Temperature
Figure 12. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
Figure 13. Capacitance vs Drain to Source
Voltage
Figure 14. Gate Charge Waveforms for Constant
Gate Current
Typical Characteristics
T
C
= 25°C unless otherwise noted
0.4
0.6
0.8
1.0
1.2
-80
-40
0
40
80
120
160
200
V
GS
= V
DS
, I
D
= 250
μ
A
N
T
J
, JUNCTION TEMPERATURE (
o
C)
T
0.90
0.95
1.00
1.05
1.10
-80
-40
0
40
80
120
160
200
T
J
, JUNCTION TEMPERATURE (
o
C)
N
I
D
= 250
μ
A
B
100
1000
0.1
1
10
5000
30
C
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 0V, f = 1MHz
C
ISS
=
C
GS
+ C
GD
C
OSS
C
DS
+ C
GD
C
RSS
=
C
GD
0
2
4
6
8
10
0
10
20
Q
g
, GATE CHARGE (nC)
30
40
50
60
V
G
,
V
DD
= 15V
I
D
= 35A
I
D
= 1A
WAVEFORMS IN
DESCENDING ORDER:
相關(guān)PDF資料
PDF描述
FDD8874 N-Channel PowerTrench MOSFET 30V, 116A
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FDD8876 N-Channel PowerTrench MOSFET
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FDD8878 N-Channel PowerTrench MOSFET
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