
F
M
2007 Fairchild Semiconductor Corporation
FDMS9600S Rev.D
www.fairchildsemi.com
1
tm
June 2007
FDMS9600S
Dual N-Channel PowerTrench
MOSFET
Q1: 30V, 32A, 8.5m
Q2: 30V, 30A, 5.5m
Features
Q1: N-Channel
Max r
DS(on)
= 8.5m
at V
GS
= 10V, I
D
= 12A
Max r
DS(on)
= 12.4m
at V
GS
= 4.5V, I
D
= 10A
Q2: N-Channel
Max r
DS(on)
= 5.5m
at V
GS
= 10V, I
D
= 16A
Max r
DS(on)
= 7.0m
at V
GS
= 4.5V, I
D
= 14A
Low Qg high side MOSFET
Low r
DS(on)
low side MOSFET
Thermally efficient dual Power 56 package
Pinout optimized for simple PCB design
RoHS Compliant
General Description
This device includes two specialized MOSFETs in a unique dual
Power 56 package. It is designed to provide an optimal
Synchronous Buck power stage in terms of efficiency and PCB
utilization. The low switching loss "High Side" MOSFET is com-
plemented by a Low Conduction Loss "Low Side" SyncFET.
Applications
Synchronous Buck Converter for:
Notebook System Power
General Purpose Point of Load
MOSFET Maximum Ratings
T
A
= 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol
V
DS
V
GS
Parameter
Q1
30
±20
32
55
12
60
Q2
30
±20
30
108
16
60
Units
V
V
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited) T
C
= 25°C
-Continuous (Silicon limited) T
C
= 25°C
-Continuous T
A
= 25°C (Note 1a)
-Pulsed
Power Dissipation for Single Operation (Note 1a)
(Note 1b)
Operating and Storage Junction Temperature Range
I
D
A
P
D
2.5
1.0
W
T
J
, T
STG
-55 to +150
°
C
R
θ
JA
R
θ
JA
R
θ
JC
Thermal Resistance, Junction to Ambient (Note 1a)
Thermal Resistance, Junction to Ambient (Note 1b)
Thermal Resistance, Junction to Case
50
120
°C/W
3
1.2
Device Marking
FDMS9600S
Device
FDMS9600S
Package
Power 56
Reel Size
13”
Tape Width
12mm
Quantity
3000 units
G1
D1
D1
D1
S1/D2
S2
S2
Power 56
D1
G2S2
4
3
2
1
5
6
7
8
Q
1
Q2