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參數(shù)資料
| 型號(hào)： | FDM3300NZ |
| 廠(chǎng)商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類(lèi)： | JFETs |
| 英文描述： | Monolithic Common Drain N-Channel 2.5V Specified PowerTrench MOSFET |
| 中文描述： | 10 A, 20 V, 0.023 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | 3.30 X 3.30 MM, LEAD FREE, MLP-8 |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大小： | 460K |
| 代理商： | FDM3300NZ |
February 2003
FDM3300NZ
Monolithic Common Drain N-Channel 2.5V Specified PowerTrench
MOSFET
2003 Fairchild Semiconductor Corporation
FDM3300NZ Rev. E3 (W)
General Description
using
Fairchild Semiconductor’s advanced Power
Trench process to optimize the R
@ V
= 2.5v on
special MicroFET lead frame with all the drains on one
side of the package.
Applications
Li-Ion Battery Pack
Features
10 A, 20 V
R
DS(ON)
= 23 m
@ V
GS
= 4.5 V
R
DS(ON)
= 28 m
@ V
GS
= 2.5 V
> 2000v ESD Protection
Low Profile – 1mm maximum – in the new package
MicroFET 3.3x3.3 mm
5
4
6
3
7
2
8
1
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
V
DSS
Drain-Source Voltage
V
GSS
Gate-Source Voltage
I
D
Drain Current – Continuous
– Pulsed
P
D
Power Dissipation (Steady State)
T
J
, T
STG
Operating and Storage Junction Temperature Range
Ratings
20
±
12
10
40
2.5
1.2
–55 to +150
Units
V
V
A
W
°
C
(Note 1a)
(Note 1a)
(Note 1b)
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JC
Thermal Resistance, Junction-to-Case
(Note 1a)
52
108
5
°
C/W
(Note 1b)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
3300N
FDM3300NZ
Reel Size
7’’
Tape width
12mm
Quantity
3000 units
F
MicroFET
D1
D2
D2
D1
S1G1
S2G2
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDM3300NZ_07 | 制造商:FAIRCHILD 制造商全稱(chēng):Fairchild Semiconductor 功能描述:Monolithic Common Drain N-Channel 2.5V Specified PowerTrench㈢ MOSFET 20V, 10A, 23mヘ |
| FDM350 | 制造商:未知廠(chǎng)家 制造商全稱(chēng):未知廠(chǎng)家 功能描述:Logic IC |
| FDM350M | 制造商:未知廠(chǎng)家 制造商全稱(chēng):未知廠(chǎng)家 功能描述:Logic IC |
| FDM3622 | 功能描述:MOSFET 100V N-Ch PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDM3622_07 | 制造商:FAIRCHILD 制造商全稱(chēng):Fairchild Semiconductor 功能描述:N-Channel PowerTrench㈢ MOSFET 100V, 4.4A, 60mヘ |
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